An on-chip combo clamp for surge and universal ESD protection in bulk FinFET technology

Tsai, Ming-Fu; Tseng, Jeng‐Sen; Huang, Chien Chao; Chang, Tzu-Heng; Chen, Kuo-Ji; Song, Ming-Hsiang

doi:10.1109/eosesd.2016.7592535

Cited by 14 publications

(7 citation statements)

References 5 publications

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“…Figs. 1 (a) and (b) show the schematics of a traditional diodebased [9], [10] and the proposed TFET-based voltage detectors, respectively. A p+/n-well diode string is used in the diode-based voltage detector, while only one conventional point TFET is used in the proposed detector.…”

Section: A Principle Of the Tfet-based Voltage Detectormentioning

confidence: 99%

“…Figs. 8 (a) and (b) shows the schematics of EOS protection circuits with the traditional diode-based [9], [10] and the proposed TFET-based voltage detectors, respectively. Both protection circuits are composed of a voltage detector, a trigger pMOSFET, and a silicon-controlled rectifier (SCR) device.…”

Section: A Principle Of the Proposed Eos Protection Circuitmentioning

confidence: 99%

“…Electrical overstress (EOS) protection and electrostatic discharge (ESD) are two important issues for integrated circuits (ICs) [9]- [11]. Recently, several studies have investigated the ESD characteristics of TFETs and proposed a hybrid TFET-MOSFET-based whole-chip ESD protection network [12]- [16].…”

Section: Introductionmentioning

confidence: 99%

“…However, it is not realistic to use on-chip RC networks to detect EOS events since they have much longer current rise times (generally over 10 μs). Therefore, a voltage detector consisting of a diode string and a resistor is often used [9][10][11]. However, the detection sensitivity and the leakage current of diode-based voltage detectors should be improved.…”

Section: Introductionmentioning

confidence: 99%

“…VDetect_Diode VDetect_TFET Figure 1. Schematics of (a) traditional diode-based voltage detector [9], [10] and (b) the proposed TFET-based voltage detector.…”

Section: Introductionmentioning

confidence: 99%

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TFET-Based Voltage Detector: Proposal and Investigation

Yang

Gao

2020

IEEE Access

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In this paper, a tunnel field-effect transistor (TFET)-based voltage detector is proposed and its electrical characteristics are investigated using technology computer-aided design (TCAD) simulation. The operating principle of the proposed voltage detector is explained and possible applications in electrical overstress (EOS) and electrostatic discharge (ESD) protection are explored. Moreover, the impact of the key parameters on device performance is also discussed. The simulation results show that the proposed TFET-based voltage detector has a low leakage current and high detection sensitivity under EOS events compared to traditional diode-based detectors. With an additional nMOSFET capacitor, the proposed circuit can also be used for ESD protection. INDEX TERMS Band-to-band tunneling (BTBT); electrical overstress (EOS); electrostatic discharge (ESD); tunnel field-effect transistor (TFET); voltage detector.

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Section: A Principle Of the Tfet-based Voltage Detectormentioning

confidence: 99%

Section: A Principle Of the Proposed Eos Protection Circuitmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…VDetect_Diode VDetect_TFET Figure 1. Schematics of (a) traditional diode-based voltage detector [9], [10] and (b) the proposed TFET-based voltage detector.…”

Section: Introductionmentioning

confidence: 99%

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