Analyzing the effects of front-surface fields on back-junction silicon solar cells using the charge-collection probability and the reciprocity theorem

Hermle, Martin; Granek, F.; Schultz, Oliver; Glunz, Stefan W.

doi:10.1063/1.2887991

Cited by 72 publications

(36 citation statements)

References 16 publications

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“…Eventually, our findings are not in direct contradiction with earlier published results in which the presence of an FSF was indicated as a requirement 1) for efficient lateral transport of the photogenerated carriers and 2) for low surface recombination velocities [53], [55]. Both mentioned effects indeed depend on the passivation quality provided in absence of the front n-type a-Si:H layer, through the substrate injection level in case 1 and directly in case 2.…”

Section: High-j Sc Interdigitated Back-contacted Silicon Heterojuncontrasting

confidence: 57%

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Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

Paviet‐Salomon

Tomasi

Descoeudres

et al. 2015

IEEE J. Photovoltaics

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Abstract-We analyze the optical losses that occur in interdigitated back-contacted amorphous/crystalline silicon heterojunction solar cells. We show that in our devices, the main loss mechanisms are similar to those of two-side contacted heterojunction solar cells. These include reflection and escape-light losses, as well as parasitic absorption in the front passivation layers and rear contact stacks. We then provide practical guidelines to mitigate such reflection and parasitic absorption losses at the front side of our solar cells, aiming at increasing the short-circuit current density in actual devices. Applying these rules, we processed a back-contacted silicon heterojunction solar cell featuring a short-circuit current density of 40.9 mA/cm 2 and a conversion efficiency of 22.0%. Finally, we show that further progress will require addressing the optical losses occurring at the rear electrodes of the back-contacted devices.

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Section: High-j Sc Interdigitated Back-contacted Silicon Heterojuncontrasting

confidence: 57%

“…It is well known that EQE data for both homojunction and heterojunction back-contacted devices can feature strong illumination dependences [11], [53], [54]. This is the case when the surface recombination velocity at the front side is highly sensitive to the (excess) carrier density.…”

Section: B Mitigation Of Short-circuit Current Losses At the Front Omentioning

confidence: 99%

Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

Paviet‐Salomon

Tomasi

Descoeudres

et al. 2015

IEEE J. Photovoltaics

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“…In contrast, the fine aluminum powder could not integrate effectively during the rapid sintering process due to their relatively larger specific surface area, which will hamper the following welding procedure. Thus, it is efficient to utilize the fine aluminum powder, in order to fill the intervals caused by coarse aluminum powder and make the conductive network link more closely as well [M. Hermle et al 2008]. Consequently, the best performance was achieved when the ratio of C-Al/F-Al reached to 2.5:1, with a surface conductivity of 6250s/cm and the quite smooth surface appearance.…”

Section: Resultsmentioning

confidence: 99%

Study of the Influences of Aluminum Pastes on Aluminum Back Surface Fields in Crystalline Silicon Solar Cells

Zhu¹,

Ge²,

Fan³

2017

dtetr

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Authors Different kinds of aluminum pastes have been successfully prepared by adding various additives including the glass powders with different melt-points, the aluminum powders with different sizes, and the inert fillers. We emphatically analyze the influence of aluminum pastes prepared as above on the electrical performance of the as-formed silicon aluminum alloy layer (P+). The optical microscope was used to observe the morphology of aluminum back surface fields (Al-BSF) formed in the rear of silicon wafers. The results show that it could promote the formation of silicon aluminum alloy layer by using the glass binder with lower melt point. The solar cell exhibits the best surface conductivity and appearance when the ratio of coarse and fine aluminum powders is 2:1. In addition, the corresponding photoelectric conversion could reach to a high level of 18.09% when the mass fraction of the inert filler was adjusted to 1.3%.

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“…With this modified NHT route, a complete n-type silicon ingot can be used, as fabrication results show, provided that the ingot has resistivity >5 Vcm. While from 2 to 5 Vcm, the passivation quality of the front n þ -n junction still improves with increasing bulk resistivity [32], and therefore J SC and the efficiency increase strongly.…”

Section: Solar Cells From the Pilot Production Linementioning

confidence: 99%

Manufacturing 100-µm-thick silicon solar cells with efficiencies greater than 20% in a pilot production line

Terheiden

Ballmann²,

Horbelt

et al. 2014

Phys. Status Solidi A

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Present address: Arizona State University, School of Electrical, Computer and Energy Engineering, 551 E. Tyler Mall, Tempe, AZ 85287, USA.Reducing wafer thickness while increasing power conversion efficiency is the most effective way to reduce cost per Watt of a silicon photovoltaic module. Within the European project 20 percent efficiency on less than 100-mm-thick, industrially feasible crystalline silicon solar cells ("20plms"), we study the whole process chain for thin wafers, from wafering to module integration and life-cycle analysis. We investigate three different solar cell fabrication routes, categorized according to the temperature of the junction formation process and the wafer doping type: p-type silicon high temperature, n-type silicon high temperature and n-type silicon low temperature. For each route, an efficiency of 19.5% or greater is achieved on wafers less than 100 mm thick, with a maximum efficiency of 21.1% on an 80-mm-thick wafer. The n-type high temperature route is then transferred to a pilot production line, and a median solar cell efficiency of 20.0% is demonstrated on 100-mm-thick wafers.

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Analyzing the effects of front-surface fields on back-junction silicon solar cells using the charge-collection probability and the reciprocity theorem

Abstract: A technique for field effect surface passivation for silicon solar cells Appl. Phys. Lett.

Cited by 72 publications

References 16 publications

Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

Study of the Influences of Aluminum Pastes on Aluminum Back Surface Fields in Crystalline Silicon Solar Cells

Manufacturing 100-µm-thick silicon solar cells with efficiencies greater than 20% in a pilot production line

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