Angle-resolved photoelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals

Abstract

Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen–hydrogen radicals on Si(100), Si(111), and Si(110) are reported. The data were obtained using synchrotron radiation, which allowed the Si 2p, N 1s, and O 1s levels to be investigated with the same probing depth. The following main results were obtained: (1) the Si3N4 film is covered with one monolayer of Si–(OH)3N. Its areal density is 15% smaller on Si(111) than on Si(100) and Si (110), (2) the Si3N4/Si interfaces on all three surfaces are compositionally abrupt. This conclusion is based on the observation that no Si atoms bonded with three N atoms and one Si atom were detected, and (3) the observation that the number of Si–H bonds at the Si3N4/Si(110) interface is 38%–53% larger than those at the Si3N4/Si(100) and Si3N4/Si(111) interfaces indicates a dependence of the interface structure on the orientation of the substrate.

Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals versus Oxygen Molecules

“…Figure 3(a) is obtained by subtracting the Si 2p 3/2 spectrum measured at TOA of 15q from Si 2p 3/2 spectrum measured at TOA of 85q for the oxide film formed utilizing OR. This subtraction was performed, to eliminate spectrum arising from the oxide film after multiplying the spectrum measured at a TOA of 15q by an appropriate factor b [6,15]. Figure 3.…”

Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals

“…19 The chemical shifts ͑CSs͒ from BE͑Si 0 ͒ in these spectra are Ϫ0.2 ͑Si ‫ء‬ ͒, 0.30 ͑mh͒, 0.50 ͑dh͒, 0.94 ͑Si 1+ ͒, 1.86 ͑Si 2+ ͒, and 2.65 ͑Si 3+ ͒ eV, respectively. 13 Note that in contrast to the SiO 2 / Si interfaces formed utilizing O radicals, Si 3+ ͑N͒ was not detected at the Si 3 N 4 / Si interfaces formed utilizing nitrogen-hydrogen radicals. 13 Note that in contrast to the SiO 2 / Si interfaces formed utilizing O radicals, Si 3+ ͑N͒ was not detected at the Si 3 N 4 / Si interfaces formed utilizing nitrogen-hydrogen radicals.…”

“…The CSs were accurately determined by the method described elsewhere. 13 Figure 2 shows I͑I͒ / I͑Si 4+ ͒ as a function of TOA for the oxide films formed on Si͑100͒, Si͑111͒, Si͑110͒, and Si͑551͒. 13 Figure 2 shows I͑I͒ / I͑Si 4+ ͒ as a function of TOA for the oxide films formed on Si͑100͒, Si͑111͒, Si͑110͒, and Si͑551͒.…”

Impact of thermal annealing on interfacial layer and electrical properties of a-SiN x : H/Si

“…Moreover, the evolution of an interface layer (IL) between SiN x and the Si substrate prevails when the bonding at the interface deviates from ideal bonding, and as a consequence due to the generation of electrically active defects there is an adverse affect on the performance of the device [7][8][9]. Therefore, the research has been focused on structural and post annealing factors to control the growth of SiN x /Si interface [10][11][12][13][14]. However, such interfaces are not very well understood or optimized in terms of variation in density evolution and its correlation with electrical properties.…”