Annealing effects on the electrical, structural and morphological properties of Ti/p-GaN/Ni/Au Schottky diode

Nagaraju, Ganesh; Rao, L. Dasaradha; Reddy, V. Rajagopal

doi:10.1007/s00339-015-9396-5

Cited by 14 publications

(2 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A few reports have been reported with various kinds of metals on p-type GaN [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] . For instance, Jang et al [21] examined the temperature-dependence of electrical properties of non-alloyed Ti/p-GaN Schottky diodes in the temperature of 293 to 443 K. Nagarajuet al [22] demonstrated the electrical and structural properties of Ti/p-GaN Schottky diode and reported that the maximum BH was achieved as 0.98 eV for the annealed contact at 300 °C. Reddy et al [23] demonstrated that the BH of Y/p-GaN Schottky diode increased after annealing at 400 and 500 °C compared to as-deposited contact.…”

Section: Introductionmentioning

confidence: 99%

Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures

Nagaraju

Reddy²,

Reddy

2017

J. Semicond.

Self Cite

View full text Add to dashboard Cite

The electrical and current transport properties of rapidly annealed Dy/p-GaN SBD are probed by I-V and C-V techniques. The estimated barrier heights (BH) of as-deposited and 200 °C annealed SBDs are 0.80 eV (I-V)/0.93 eV (C-V) and 0.87 eV (I-V)/1.03 eV (C-V). However, the BH rises to 0.99 eV (I-V)/ 1.18 eV(C-V) and then slightly deceases to 0.92 eV (I-V)/1.03 eV (C-V) after annealing at 300 °C and 400 °C. The utmost BH is attained after annealing at 300 °C and thus the optimum annealing for SBD is 300 °C. By applying Cheung's functions, the series resistance of the SBD is estimated. The BHs estimated by I-V, Cheung's and Ψ S -V plot are closely matched; hence the techniques used here are consistency and validity. The interface state density of the as-deposited and annealed contacts are calculated and we found that the N SS decreases up to 300 °C annealing and then slightly increases after annealing at 400 °C. Analysis indicates that ohmic and space charge limited conduction mechanisms are found at low and higher voltages in forward-bias irrespective of annealing temperatures. Our experimental results demonstrate that the Poole-Frenkel emission is leading under the reverse bias of Dy/p-GaN SBD at all annealing temperatures.

show abstract

Section: Introductionmentioning

confidence: 99%

Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures

Nagaraju

Reddy²,

Reddy

2017

J. Semicond.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Recently, Nagaraju et al [8] studied the interface state density of Ti/p-GaN SD using 𝐼-𝑉 and capacitance-voltage (𝐶-𝑉 ) methods at different annealing temperatures, and found that the interface state density was of a 10 12 eV −1 cm −2 magnitude. The interface state density as determined from 𝐼-𝑉 and 𝐶-𝑉 techniques is limited by the bulk doping density and profile of the semiconductor.…”

mentioning

confidence: 99%

Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

Zhu¹,

Zhang²,

Liang³

et al. 2017

Chinese Phys. Lett.

View full text Add to dashboard Cite

For the frequency range of 1 kHz–10 MHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage (C–V) and conductance-frequency-voltage (G–f–V) measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance () on high-frequency (5 MHz) capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the – capacitance and the conductance method are and , respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.

show abstract

Electrical properties and transport mechanisms of Au/Ba0.6Sr0.4TiO3/GaN metal–insulator–semiconductor (MIS) diode at high temperature range

Reddy

2016

Appl. Phys. A

View full text Add to dashboard Cite

Annealing effects on the electrical, structural and morphological properties of Ti/p-GaN/Ni/Au Schottky diode

Cited by 14 publications

References 47 publications

Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures

Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures

Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

Electrical properties and transport mechanisms of Au/Ba0.6Sr0.4TiO3/GaN metal–insulator–semiconductor (MIS) diode at high temperature range

Contact Info

Product

Resources

About