Area dependence of thermal stability factor in perpendicular STT-MRAM analyzed by bi-directional data flipping model

Tsunoda, Koji; Aoki, Masaki; Noshiro, Hideyuki; Iba, Y.; Fukuda, Shun; Yoshida, Chikako; Yamazaki, Yoichi; Takahashi, Atsushi; Hatada, A.; Nakabayashi, Masaaki; Tsuzaki, Yosuke; Sugii, T.

doi:10.1109/iedm.2014.7047082

Cited by 12 publications

(3 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Even though we only have data at 10 10 cycles level, it would be better than those of commercialized embedded STT MRAM devices [43] and would be possible to achieve higher cycles as claimed by the first-generation field-driven toggle MRAM [13] . We also note that the R SOT of W channel remains nearly the same, which satisfies the electromigration (EM) requirement even if it is not a stringent EM qualification method [44] . During the endurance test, the MR loops were recorded multiple times at each power of 10 pulses up to 10 10 (Fig.…”

Section: ̵ Hmentioning

confidence: 77%

Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

Zhang

Jiang

et al. 2022

J. Semicond.

View full text Add to dashboard Cite

We demonstrate in-plane field-free-switching spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices that are capable of low switching current density, fast speed, high reliability, and, most importantly, manufactured uniformly by the 200-mm-wafer platform. The performance of the devices is systematically studied, including their magnetic properties, switching behaviors, endurance and data retention. The successful integration of SOT devices within the 200-mm-wafer manufacturing platform provides a feasible way to industrialize SOT MRAMs. It is expected to obtain excellent performance of the devices by further optimizing the MTJ film stacks and the corresponding fabrication processes in the future.

show abstract

Section: ̵ Hmentioning

confidence: 77%

Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

Zhang

Jiang

et al. 2022

J. Semicond.

View full text Add to dashboard Cite

show abstract

“…In another direction, researchers investigated whether experimental measurement of ∆ [90] was accurate. For a typical thermal stability (above 60), direct measurement of retention (e.g.…”

Section: Information Storingmentioning

confidence: 99%

Magnetoresistive Random Access Memory

2016

View full text Add to dashboard Cite

A review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations are described with a particular focus on Spin-Transfer-Torque MRAM (STT-MRAM) which is currently receiving the greatest attention. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, including already commercialized MRAM products, are discussed.

show abstract

“…Since considerable effort has been required to keep energy barriers large as MTJ devices become smaller [54,55], it seems that it should not be difficult to fabricate devices with small enough barriers to enable thermally driven transitions. Variations in the barrier height should not pose a difficulty if it is possible to maintain the roughly 10 % variation in barrier heights [56] as devices are scaled down.…”

Section: Smtj Programmable Bitstream Generatormentioning

confidence: 99%

Energy-Efficient Stochastic Computing with Superparamagnetic Tunnel Junctions

et al. 2020

View full text Add to dashboard Cite

Superparamagnetic tunnel junctions have emerged as a competitive, realistic nanotechnology to support novel forms of stochastic computation in CMOS-compatible platforms. One of their applications is to generate random bitstreams suitable for use in stochastic computing implementations. We describe a method for digitally programmable bitstream generation based on pre-charge sense amplifiers which is more energy efficient than previously explored alternatives. The energy savings offered by this digital generator survive when we use them as the fundamental units of a neural network architecture. To take advantage of the potential savings, we codesign the algorithm with the circuit, rather than directly transcribing a classical neural network into hardware. The flexibility of the neural network mathematics compensates for explicitly energy efficient choices we make at the device level. The result is a convolutional neural network design operating at ≈ 150 nJ per inference with 97 % performance on MNIST-nearly an order of magnitude more energy efficiency than comparable proposals in the recent literature. * matthew.daniels@nist.gov † mark.stiles@nist.govThe low energy, truly random behavior, ease of control, and established compatibility with complementarymetal-oxide-semiconductor (CMOS) circuitry has led to the use of SMTJs as the basis for a number of novel computing schemes [11][12][13]. SMTJs were proposed to implement the concept of probabilistic bits, or "p-bits," which were leveraged for applications as Bayesian neural networks [14][15][16], invertible Boolean logic [17,18], reservoir computing [19], and Ising network models applied to optimization problems [20,21]. SMTJs were also proposed as stochastic neural units [22] that can interact with synaptic units, emulated by crossbar arrays of mag-

show abstract

Area dependence of thermal stability factor in perpendicular STT-MRAM analyzed by bi-directional data flipping model

Cited by 12 publications

References 3 publications

Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

Magnetoresistive Random Access Memory

Energy-Efficient Stochastic Computing with Superparamagnetic Tunnel Junctions

Contact Info

Product

Resources

About