Assessing the performance of two-dimensional dopant profiling techniques

Abstract

This article discusses the results obtained from an extensive comparison set up between nine different European laboratories using different two-dimensional ͑2D͒ dopant profiling techniques ͑SCM, SSRM, KPFM, SEM, and electron holography͒. This study was done within the framework of a European project ͑HERCULAS͒, which is focused on the improvement of 2D-profiling tools. Different structures ͑staircase calibration samples, bipolar transistor, junctions͒ were used. By comparing the results for the different techniques, more insight is achieved into their strong and weak points and progress is made for each of these techniques concerning sample preparation, dynamic range, junction delineation, modeling, and quantification. Similar results were achieved for similar techniques. However, when comparing the results achieved with different techniques differences are noted.

Microscopic Basis for the Mechanism of Carrier Dynamics in an Operatingp−nJunction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy

“…Thus, direct observation of the characteristics, which provides us with the basis of the results of the macroscopic analysis, is of great importance and there has been a growing desire to obtain nanoscale characterization techniques to probe various electrical properties in semiconductor devices. For this purpose, advanced microscopy, which enables us to investigate nanoscale electrostatic potential distributions and doping profiles, has been developed [1][2][3][4]. However, the measurement of carrier transport in operating devices has rarely been performed [5,6] in spite of its fundamental and practical importance.…”

Charge storage in silicon-implanted silicondioxide layers examined by scanning probe microscopy

“…Scanning capacitance microscopy (SCM) has been up to now mainly applied for the dopant profiling in semiconductor test structures or on device cross sections [22][23][24]. Compared to this, the extent of SCM studies explicitly dedicated to the properties of dielectric layers is quite small.…”

Nanoscale Characterization Of Ultra-Thin Dielectrics Using Scanning Capacitance Microscopy

“…Scanning Capacitance Microscopy (SCM) is a widely used tool for dopant mapping in semiconductor structures [1] because it is particularly efficient to discriminate between n-type and p-type dopants in spite of a relatively poor spatial resolution as compared to other techniques like Scanning Spreading Resistance Microscopy [2]. SCM relies on the presence of an oxide on the surface, necessary to form the Metal-Oxide-Semiconductor (MOS) stack which is at the basis of the SCM operation.…”