Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire

Johnston, Carol F.; Kappers, Menno J.; Moram, M. A.; Hollander, J. L.; Humphreys, C. J.

doi:10.1016/j.jcrysgro.2009.03.044

Cited by 57 publications

(50 citation statements)

References 21 publications

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“…Non-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) InGaN quantum dots (QDs) were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer.…”

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confidence: 99%

“…It is not clear whether this is a measure of the true linewidth of the emission, or whether the measurement is affected by spectral diffusion. In this letter, an alternative method for the growth of non-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) InGaN QDs by metal organic vapour phase epitaxy (MOVPE) is reported, utilising a temperature ramp in an ammonia and nitrogen environment to achieve improved luminescence properties. Low temperature cathodoluminescence (CL) and micro-photoluminescence (µPL) show the presence of sharp peaks in the collected spectra, whose linewidth is limited by the resolution of the detection system.…”

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confidence: 99%

“…GaN a-plane pseudo-substrates were prepared by a silicon nitride interlayer (SiN x ) technique to reduce the dislocation density. 12 A low-temperature nucleation layer was grown, followed by a two-dimensional (2D) growth step and the deposition of a SiN x interlayer for 600 s using a SiH 4 flux of 200 nmol/min and an ammonia flow of 446 mmol/min. A short period of three-dimensional growth at a V/III ratio of 1900 was then carried out to form islands, which was followed by coalescence and 2D growth at a V/III ratio of 60 and then by a further ∼500 nm GaN growth at a V/III ratio of 740 to improve the luminescence properties.…”

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Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

et al. 2014

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Non-polar (11-20) InGaN quantum dots (QDs) were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer. Uncapped structures with and without the temperature ramp were grown for reference and imaged by atomic force microscopy. Micro-photoluminescence studies reveal the presence of resolution limited peaks with a linewidth of less than ∼500 μeV at 4.2 K. This linewidth is significantly narrower than that of non-polar InGaN quantum dots grown by alternate methods and may be indicative of reduced spectral diffusion. Time resolved photoluminescence studies reveal a mono-exponential exciton decay with a lifetime of 533 ps at 2.70 eV. The excitonic lifetime is more than an order of magnitude shorter than that for previously studied polar quantum dots and suggests the suppression of the internal electric field. Cathodoluminescence studies show the spatial distribution of the quantum dots and resolution limited spectral peaks at 18 K.

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Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

et al. 2014

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“…This type of as-grown ELOG GaN pseudo-substrate was characterized previously by transmission electron microscopy 11 . In summary, in the window region, the dislocation density was (1.0±0.06) × 10 10 cm -2 and the density of basal plane stacking faults (BSFs) was (2.6±0.3) × 10 5 cm -1 .…”

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Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Zhu

Oehler

Reid

et al. 2013

Applied Physics Letters

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We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of sub-surface QDs have been achieved by cathodoluminescence at 8 K. Microphotoluminescence studies of the QDs reveal resolution limited sharp peaks with typical linewidth of 1 meV at 4.2 K. Time-resolved photoluminescence studies suggest the excitons in these QDs have a typical lifetime of 538 ps, much shorter than that of the c-plane QDs, which is strong evidence of the significant suppression of the internal electric fields.

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“…For the QW sample, the wells were deposited on a 5.5 lm thick a-plane GaN template which incorporated a single SiN x interlayer, which has been shown to reduce the TD density. 12 Typically, the densities of partial dislocations and BSFs are around 1 Â 10 9 cm À2 and 2 Â 10 5 cm…”

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confidence: 99%

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

Kundys

Schulz²,

Oehler

et al. 2014

Journal of Applied Physics

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We have performed a detailed study of the impact of basal plane stacking faults (BSFs) on the optical properties of both a-plane InGaN/GaN quantum wells (QWs) and GaN template samples grown on r-sapphire. In particular, we have used polarised photoluminescence excitation spectroscopy (P-PLE) to investigate the nature of the low temperature recombination as well as extracting information on the valence band (VB) polarisation anisotropy. Our low temperature P-PLE results revealed not only excitons associated with intersubband quantum well transitions and the GaN barrier material but also a transition associated with creation of excitons in BSFs. The strength of this BSF transition varied with detection energy across the quantum well emission suggesting that there is a significant contribution to the emission line width from changes in the local electronic environment of the QWs due to interactions with BSFs. Furthermore, we observed a corresponding progressive increase in the VB splitting of the QWs as the detection energy was varied across the quantum well emission spectrum. V C 2014 AIP Publishing LLC.

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Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire

Cited by 57 publications

References 21 publications

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

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