Asymmetric Current Behavior on Unipolar Resistive Switching in Pt/HfO<sub>2</sub>/Pt Resistor With Symmetric Electrodes

Kang, Jingoo; Park, In Sung

doi:10.1109/ted.2016.2556665

Cited by 12 publications

(3 citation statements)

References 18 publications

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“…Figure 2 b presents that an obvious asymmetric I–V hysteresis loop between positive and negative voltage regions. It implies the formation of a Schottky-like barrier at the Au/LNFO/ITO interface [ 22 – 24 ]. Above I–V hysteresis obtained under stressing forward and reversed voltages sweep demonstrates that the LNFO-based device possesses the electronic RS memory ability.…”

Section: Resultsmentioning

confidence: 99%

Multilevel resistive switching memory in lead-free double perovskite La$$_{2}$$NiFeO$$_{6}$$ films

Qin,

Gao,

et al. 2023

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Dense and flat La$$_{2}$$ 2 NiFeO$$_{6}$$ 6 (LNFO) films were fabricated on the indium tin oxide-coated glass (ITO/glass) substrate by sol–gel method. The bipolar resistive switching behavior (BRS) could be maintained in 100 cycles and remained after 30 days, indicating that the LNFO-based RS device owned good memory stability. Surprisingly, the multilevel RS characteristics were firstly observed in the Au/LNFO/ITO/glass device. The high resistance states (HRSs) and low resistance state (LRS) with the maximum ratio of $$\sim$$ ∼ 500 could be remained stably in 900 s and 130 cycles, demonstrating the fine retention and endurance ability of this LNFO-based RS device. The BRS behavior of Au/LNFO/ITO/glass devices primarily obeyed the SCLC mechanism controlled by oxygen vacancies (OVs) dispersed in the LNFO layer. Under the external electric field, injected electrons were captured or discharged by OVs during trapping or detrapping process in the LNFO layer. Thus, the resistive state switched between HRS and LRS reversibly. Moreover, the modulation of Schottky-like barrier formed at the Au/LNFO interface was contributed to the resistive states switchover. It was related to the change in OVs located at the dissipative region near the Au/LNFO interface. The multilevel RS ability of LNFO-based devices in this work provides an opportunity for researching deeply on the high density RS memory in lead-free double perovskite oxides-based devices.

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Section: Resultsmentioning

confidence: 99%

Multilevel resistive switching memory in lead-free double perovskite La$$_{2}$$NiFeO$$_{6}$$ films

Qin,

Gao,

et al. 2023

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“…The choice of metal electrodes affects the behavior of HfO x -based RRAM a lot. Normally, when noble metal (i.e., Pt and Ru) is constructed as the top and bottom electrodes [7][8][9], the devices have unipolar switching because the conductive filament (CF) is annihilated by thermal diffusion. However, the switching behavior of unipolar RRAM is unstable, and the current during the annihilation of CF is too large for the applications of embedded memory, FPGA, and in-memory computation.…”

Section: Introductionmentioning

confidence: 99%

HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance

et al. 2022

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A trade-off between the memory window and the endurance exists for transition-metal-oxide RRAM. In this work, we demonstrated that HfOx/Ge-based metal-insulator-semiconductor RRAM devices possess both a larger memory window and longer endurance compared with metal-insulator-metal (MIM) RRAM devices. Under DC cycling, HfOx/Ge devices exhibit a 100× larger memory window compared to HfOx MIM devices, and a DC sweep of up to 20,000 cycles was achieved with the devices. The devices also realize low static power down to 1 nW as FPGA’s pull-up/pull-down resistors. Thus, HfOx/Ge devices act as a promising candidates for various applications such as FPGA or compute-in-memory, in which both a high ON/OFF ratio and decent endurance are required.

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“…Resistive random access memory (RRAM) devices offer significant application potential in future non-volatile data storage technology [1][2][3][4] due to their fast operation speed, high storage density, and process compatibility with today's silicon technology. [5][6][7] In previous research of RRAM, the resistive switching modes are generally classified as unipolar resistive switching (URS) mode and bipolar resistive switching (BRS) [8] mode.…”

Section: Introductionmentioning

confidence: 99%

Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO₂/Ti/Pt device*

Jiao¹,

Gan²,

Cheng³

et al. 2021

Chinese Phys. B

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The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current. In the present work, the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO2/Pt RRAM device. The role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism, which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface.

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Asymmetric Current Behavior on Unipolar Resistive Switching in Pt/HfO₂/Pt Resistor With Symmetric Electrodes

Cited by 12 publications

References 18 publications

Multilevel resistive switching memory in lead-free double perovskite La$$_{2}$$NiFeO$$_{6}$$ films

Multilevel resistive switching memory in lead-free double perovskite La$$_{2}$$NiFeO$$_{6}$$ films

HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance

Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO₂/Ti/Pt device*

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Asymmetric Current Behavior on Unipolar Resistive Switching in Pt/HfO2/Pt Resistor With Symmetric Electrodes

Cited by 12 publications

References 18 publications

Multilevel resistive switching memory in lead-free double perovskite La$$_{2}$$NiFeO$$_{6}$$ films

Multilevel resistive switching memory in lead-free double perovskite La$$_{2}$$NiFeO$$_{6}$$ films

HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance

Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device*

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Asymmetric Current Behavior on Unipolar Resistive Switching in Pt/HfO₂/Pt Resistor With Symmetric Electrodes

Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO₂/Ti/Pt device*