IEICE Trans. Electron.
 2016
DOI: 10.1587/transele.e99.c.547
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Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell

Sungjun Kim
1
,
Min-Hwi Kim
2
,
Seongjae Cho
3
et al.
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Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

Тихов
1
,
Mikhaylov
2
,
Belov
3
et al. 2018
Microelectronic Engineering
39
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12
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Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

Тихов
1
,
Mikhaylov
2
,
Belov
3
et al. 2018
Microelectronic Engineering
39
0
12
0
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Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

Koryazhkina
1
,
Тихов
2
,
Mikhaylov
3
et al. 2018
J. Phys.: Conf. Ser.
8
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1
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Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate

Тихов
1
,
Горшков
2
,
Антонов
3
et al. 2018
Semiconductors
11
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