2020 IEEE Symposium on VLSI Technology 2020
DOI: 10.1109/vlsitechnology18217.2020.9265038
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Bumpless Build Cube (BBCube): High-Parallelism, High-Heat-Dissipation and Low-Power Stacked Memory using Wafer-Level 3D Integration Process

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Cited by 6 publications
(12 citation statements)
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“…The electrical characteristics of the BBCube structure were calculated by 3D EM field analysis and compared to conventional 3D integration (3DI) with micro-bumps [34]. The TSV model used for conventional 3DI with micro-bumps, such as HBM, is shown in Figure 30a, and the TSV model used for BBCube is shown in Figure 30b.…”
Section: Electrical Characteristics Of Bbcubementioning
confidence: 99%
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“…The electrical characteristics of the BBCube structure were calculated by 3D EM field analysis and compared to conventional 3D integration (3DI) with micro-bumps [34]. The TSV model used for conventional 3DI with micro-bumps, such as HBM, is shown in Figure 30a, and the TSV model used for BBCube is shown in Figure 30b.…”
Section: Electrical Characteristics Of Bbcubementioning
confidence: 99%
“…Circuit simulation was used to estimate the power consumption of the I/O circuit. An eye diagram was calculated, and the I/O current that satisfies the eye mask was determined [34]. The structure of BBCube is presented in Figure 32 and a block diagram of the simulation is shown in Figure 33a.…”
Section: Electrical Characteristics Of Bbcubementioning
confidence: 99%
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