Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz

Zhong, Donglai; Shi, Huiwen; Ding, Li; Zhao, Chenyi; Liu, Jingxia; Zhou, Jianshuo; Zhang, Zhiyong; Peng, Lian‐Mao

doi:10.1021/acsami.9b15334

Cited by 38 publications

(45 citation statements)

References 39 publications

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“…However, all of the intrinsic results were below 30 GHz mainly due to low purity. The extrinsic f T of these CNTFETs have been increased from a few hundred MHz up to recently 100 GHz [83]- [87], [90]. In 2011, RF Nano Co. demonstrated a 4 wafer CNTFET process with extrinsic values of f T and maximum oscillation frequencies f max around 10 GHz [13], [20], [89].…”

Section: Electrical Resultsmentioning

confidence: 99%

“…Process optimization yielded a current density of 350 μA/μm and a transconductance of 310 μS/μm along with extrinsic f T and f max of 70 GHz [95]. In 2019, the PKU group published results [90] based on a solutionderived randomly oriented CNT films with a transconductance up to 380 μS/μm. Due to the high density combined with successful channel length reduction, the extrinsic f max exceeded 100 GHz for 30 nm gate length devices, representing the best extrinsic (only pad de-embedded) performance to date.…”

Section: Electrical Resultsmentioning

confidence: 99%

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CNTFET Technology for RF Applications: Review and Future Perspective

et al. 2021

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RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in the near future. Experimental proof of concept that outperformed Si CMOS at the 130 nm technology has already been achieved with a vast potential for improvements. This review compiles and compares the different CNT integration technologies, the achieved RF results as well as demonstrated RF circuits. Moreover, it suggests approaches to enhance the RF performance of CNTFETs further to allow more profound CNTFET based systems e.g., on flexible substrates, highly dense 3D stacks, heterogeneously combined with incumbent technologies or an all-CNT system on a chip.

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Section: Electrical Resultsmentioning

confidence: 99%

Section: Electrical Resultsmentioning

confidence: 99%

CNTFET Technology for RF Applications: Review and Future Perspective

et al. 2021

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“…[118,[120][121][122] Impressively, CNF FET with a gate length as small as 5 nm [123] and a computer processor made by more than 14 000 CMOS CNT FETs [124] have been demonstrated. Although CNT integrated circuits can be made on plastic substrate [125] and RF FETs have been fabricated on rigid substrate with high performance (f T / f max of 86 GHz/85 GHz, simultaneously), [126] the development of CNT-based flexible microwave transistors significantly lags behind and the RF performance of CNT transistors on plastic substrate remain modest. Flexible CNT transistor with gate length of 800 nm has been reported and showed intrinsic (deembedded) f T beyond 5 GHz and extrinsic f T of 1 GHz.…”

Section: Flexible Microwave Transistors Based On Emerging Low-dimensimentioning

confidence: 99%

“…CNT transistors have demonstrated their outstanding RF performance on rigid substrates. [126] The present challenge is its limited current/ power handling capabilities, that may be improved by implementing a larger bundle of aligned CNTs. More importantly, development of handling methods to allow these transistors to operate on flexible and stretchable substrates is highly desired.…”

Section: Conclusion and Future Perspectivementioning

confidence: 99%

Flexible and Stretchable Microwave Electronics: Past, Present, and Future Perspective

Zhang

Lan

Qiu

et al. 2020

Adv Materials Technologies

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2000759 (6 of 38) www.advmattechnol.de Figure 4. Flexible microwave transistors. a) Schematic illustration of fabrication process flow of flexible microwave TFTs based on Si nanomembrane. Left, two-step transfer-printing of Si nanomembrane on flexible substrate with assist of PDMS stamp. Right, direct flip-printing Si nanomembrane on flexible substrate. Reproduced with permission. [72] Copyright 2010, Wiley-VCH. b) Flexible microwave Si TFT using direct flip-printing approach in (a). Reproduced under the terms of the Creative Commons Attribution 4.0 International License. [75] Copyright 2016, Springer Nature. c) Flexible microwave Si TFT using two-step approach in (a). Reproduced with permission. [72] Copyright 2010, Wiley-VCH. d) Cross-section SEM image of flexible Si MOSFET made by thinning a 65 nm node SOI wafer. Reproduced with permission. [45] Copyright 2013, American Institute of Physics. e) Optical images of flexible GaAs HBT on cellulose nanofibril (CNF) substrate. Reproduced under the terms of the Creative Commons Attribution 4.0 International License. [90] Copyright 2015, Springer Nature. f) Schematic illustration and normalized on-state conductance (G/G 0), maximum transconductance (g m /g m0) of flexible InAs MOSFET with self-aligned gate. Reproduced with permission. [53] Copyright 2012, American Chemical Society. g) Cross-section schematic illustration and gain curves of flexible InGaAs/InAlAs HEMT as function of frequency under various bending conditions. Reproduced with permission. [91] Copyright 2013, American Institute of Physics. h) Output power density (P OUT), power gain (G P) and power-added efficiency (PAE) of the flexible GaN HEMT on thermal conductive tape with thermal conductivity of 1.6 W m −1 K −1. Reproduced with permission. [92] Copyright 2017, Wiley-VCH. i) Photography of AlGaN/GaN film grown on BN coated sapphire substrate and printed on flexible tape. Reproduced with permission. [19] Copyright 2017, Wiley-VCH. j) Cross-section schematic illustration of bottom gate flexible graphene FET (GFET). Reproduced with permission. [93] Copyright 2013, American Chemical Society. k) Cross-section schematic illustration of top gate flexible GFET with self-aligned gate configuration. Reproduced with permission. [94] Copyright 2014, American Chemical Society. l) High-frequency characteristics of flexible GFET with gate length of 50 nm. Reproduced with permission. [95] Copyright 2018, Wiley-VCH. m) Schematic illustration and gain curves of flexible microwave transistor based on MoS 2 as function of frequency. Reproduced with permission. [96] Copyright 2014, Springer Nature. n) High-frequency characteristics of flexible microwave transistor based on black phosphorus (BP) as function of frequency. Reproduced with permission.

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“…Y Dem represents the deembedded Y -parameters. The three-step parasitic de-embedding method has been considered suitable to be applied to CNTFET characterization due to the high operation frequency expected in this technology [7][8][9][10][11] where an appropriate deembedding method can improve accuracy of the device experimental data [24,26]. Notice that the extracted extrinsic parameters do not consider the contribution of the contact resistances at the source and drain sides since these resistances are produced on the interface between CNTs and contact metallizations.…”

Section: Extraction Of the Extrinsic Parametersmentioning

confidence: 99%

Small-signal parameters extraction and noise analysis of CNTFETs

Ramos-Silva

Pacheco‐Sanchez

Enciso-Aguilar³

et al. 2020

Semicond. Sci. Technol.

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The use of carbon nanotube (CNT) field-effect transistors (FETs) in microwave circuit design requires an appropriate, immediate and efficient description of their performance. This work describes a technique to extract the parameters of an electrical equivalent circuit for CNTFETs. The equivalent circuit is used to model the dynamic and noise performance at low-and highfrequency of different CNTFET technologies, considering extrinsic and intrinsic device parameters as well as the contact resistance. The estimation of the contact resistance at the metal/CNTs interfaces is obtained from a Y-function based extraction method. The noise model includes four noise sources: thermal noise, thermal channel noise, shot channel noise and flicker noise. The proposed model is compared with a compact model calibrated to hysteresis-free experimental data from a high-frequency multi-tube (MT)-CNTFET technology. Additionally, it has been applied to experimental data from another fabricated MT-CNTFET technology. The comparison in both cases shows a good agreement between reference data (simulation and experimental) and results from the proposed model. Low-and high-frequency noise projections of the fabricated reference device are further studied. Noise results from both studied technologies show that shot noise mainly contributes to the total noise due to the presence of Schottky barriers at contacts and along the channel.

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Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz

Cited by 38 publications

References 39 publications

CNTFET Technology for RF Applications: Review and Future Perspective

CNTFET Technology for RF Applications: Review and Future Perspective

Flexible and Stretchable Microwave Electronics: Past, Present, and Future Perspective

Small-signal parameters extraction and noise analysis of CNTFETs

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