Characteristics of thin plasmachemical silicon carbon nitride films deposited using hexamethyldisilane

Abstract

Silicon carbon nitride (SiCN) coatings are produced by plasma-enhanced chemical vapor deposition using hexamethyldisilane, N 2 , and H 2 as precursors at various nitrogen flow rates (F N ). X-ray diffraction data, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, adhesion, friction coefficient, abrasive wear resistance, and microprofiling of the film surface are used to characterize the coatings deposited on silicon substrates. The x-ray diffraction analysis shows that all the films have an amorphous structure. The chemical bonding in the films results from the main , the wear resistance of the films increases and their friction coefficient decreases since Si−C bonds are strengthened. The SiCN films deposited using hexamethyldisilane as the main source material exhibit tribological properties that are comparable with those of amorphous SiCN films deposited using other precursors.

Microwave PECVD Silicon Carbonitride Thin Films: A FTIR and Ellipsoporosimetry Study

“…This shift occurs both at 300 and 500 K and is due to changes of the Si near environment, with carbon atoms being progressively replaced by nitrogen atoms In agreement to previous studies, the shoulder in the range of 1 000–1 100 cm −1 can be attributed to SiOSi stretching or SiCH 2 Si wagging. The main band, centered at ≈950 cm −1 , is more intense for films deposited at 500 K than for those deposited at 300 K, thus revealing higher SiC and SiN bond concentrations in the former case. Conversely, NH, CH, and SiH stretching band are less intense in films deposited at 500 K, revealing lower H concentration.…”

“…For the deconvolution analysis (using Labspec TM software) of the main FTIR absorption band, the criterion of using the lowest number of components was applied. The positions and attributions of the bands are listed in Table . Figure a shows a typical fitting for sample Si3 deposited at 300 K in the range of 1 300–600 cm −1 .…”

Amorphous silicon carbonitride diaphragm for environmental-cell transmission electron microscope fabricated by low-energy ion beam induced chemical vapor deposition

“…In addition, absorption bands of the Si-N stretching mode at $950 cm À1 , C@N stretching mode at $1700 cm À1 , and C"N stretching mode at $2200 cm À1 were confirmed. The assignment of these absorption bands was based on literature findings [5,[13][14][15]. The nitrogen concentration ratios of the films deposited at 300 and 600 eV were 8.9% and 20.5%, respectively, as confirmed by XPS.…”

“…We previously reported E-cell diaphragms made from boron oxide, boron carbonitride, and silicon carbonitride using by pulse plasma enhanced chemical vapor deposition (PECVD) [3,4]. These materials are well known to form hard coatings [2,[4][5][6][7][8]. PECVD results in more uniform film coverage and a more rapid growth rate as compared to sputtering.…”

Effect of nitrogen flow rate on the mechanical properties of CVD-deposited SiCN thin films

“…The major advantage offered by this material is the possibility to tailor its properties by varying its process parameters, appropriately, for wear resistance and high-temperature applications [6,7]. Ivashchenko et al [8] prepared SiCN coating by plasma-enhanced chemical vapour deposition (PECVD) using hexamethyldisilane, N 2 and H 2 as precursors at various nitrogen flow rates. With the increasing N 2 flow rate, the wear resistance of the film was found to be increasing.…”