Chemical vapor deposition of copper from 1,5-cyclooctadiene copper(I) hexafluoroacetylacetonate

Abstract

We have studied the chemical vapor deposition of copper from 1,5-cyclooctadiene Cu(I) hexafluoroacetylacetonate, a moderately volatile yellow cystalline solid. It yields pure copper by pyrolytic decomposition at 150–250 °C, produces copper films with near bulk resistivity, and has the advantage of being air stable at room temperature.

Me3SiCC–CMeCH2 copper(I) β-diketonates: Synthesis, solid state structure, and low-temperature chemical vapour deposition

“…Among attention as CVD precursors, since the O,O-chelatebound b-diketonate and the corresponding Lewis-bases L can be straightforward varied to tailor the volatility and stability of such systems [1,2,[9][10][11][12]. As Lewis-bases L, phosphines, phosphites [11][12][13], alkenes [14][15][16][17][18], dienes [10,19], or alkynes [2,20,21] can be used to obtain an assortment of precursors with variable properties. The thermal decomposition of [Cu(b-diketonate)] occurs at low temperatures, generally in the range between 150 and 250°C to give elemental copper along with [Cu(bdiketonate) 2 ] [22].…”

“…substitution reactions. Changing, for example, the Lewis-base L in [L n Cu(bdiketonate)] (n = 1, 2) can directly alter the physical state, the vapour pressure, the decomposition temperature, and the long-term stability of the respective precursors [1,10]. For example, [(g 2 -alkyne)Cu(hfac)] can be used as CVD precursor, however, a less volatile compound is formed in the bubbler along with elemental copper [21].…”

Electroenhanced Metallorganic Chemical Vapor Deposition of Copper Films

“…In the previous studies by Reynolds et al, 7 Cohen et al, 8,9 and Jian et al, 10 hexafluoroacetylacetonate-copper͑I͒-1,5-cyclooctadine, ͑hfac͒Cu I ͑COD͒, has been widely employed as the precursor for copper film deposition. This precursor has been extensively examined for the CVD process with technical modifications that include aerosol-assisted CVD and surface pretreatment on diffusion barriers by exposure of I 2 plasma.…”

Property of HexafluoroacetylacetonateCu(I) (3,3-Dimethyl-1-butene) as a Liquid Precursor for Chemical Vapor Deposition of Copper Films

“…4 CF 3 groups in hfac are strong electron withdrawing groups which decrease the electronic density of Cu(I) and strengthen the Cu-L bond. L has double (alkene) or triple (alkyne) bonds to give electrons to copper which stabilizes the Cu(I) β-diketonate compound, and it is believed that L has an influence on the properties of the precursor such as physical state, long-term stability, vapor pressure, decomposition temperature, deposition rate, and other physicochemical and deposition characteristics.…”