1995
DOI: 10.1109/68.414691
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Communication through stacked silicon circuitry using integrated thin film InP-based emitters and detectors

Abstract: To demonstrate optical communication through stacked silicon circuitry, thin film InGaAsP-based emitters and photodetectors have been bonded directly onto silicon circuitry. These optoelectronic devices operate at a wavelength to which silicon is transparent. The thin film emitters and detectors were integrated onto a MOSIS foundry silicon CMOS integrated circuit which contained driver and amplifier circuits. Bidirectional vertical optical communication between two layers of circuitry was demonstrated by stack… Show more

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Cited by 18 publications
(10 citation statements)
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“…The lower row of photomicrographs shows individually integrated and reported components (from left to right): a thin film III-V edge emitting laser bonded to Si [12], a vertically coupled polymer microring resonator integrated onto silicon [13], and an InGaAs metal-semiconductor-metal (MSM) photodetector integrated onto silicon [14]. The planar integration of these optical components is an emerging technology that is being focused upon in the integration of portable optical sensing systems [15][16][17].…”
Section: Biophotonicsmentioning
confidence: 99%
“…The lower row of photomicrographs shows individually integrated and reported components (from left to right): a thin film III-V edge emitting laser bonded to Si [12], a vertically coupled polymer microring resonator integrated onto silicon [13], and an InGaAs metal-semiconductor-metal (MSM) photodetector integrated onto silicon [14]. The planar integration of these optical components is an emerging technology that is being focused upon in the integration of portable optical sensing systems [15][16][17].…”
Section: Biophotonicsmentioning
confidence: 99%
“…Indirect bonding technologies that are easier to use include adhesive bonding or eutectic bonding, where intermediate layers of polymers [20][21][22][23][24][25][26][27][28]36], spin-on-glasses [37] and metals [17][18][19]38]. These methods may ease bonding of dies to wafers, reducing the amount of III-V material to be used on a Si wafer.…”
Section: Indirect Inp-to-si Wafer Bondingmentioning
confidence: 99%
“…Emitters fabricated below the substrate that operate in this range can be coupled to detectors above the chip. This has been achieved using InP-based emitters and detectors [23]. By stacking several layers of silicon circuitry and implementing these emitter-detector pairs between each layer, high-throughput architectures can be achieved [24].…”
Section: Through-wafer Interconnectsmentioning
confidence: 99%