Compact ECR-source of ions and radicals for semiconductor surface treatment

SwedenABSTRACr Quantum well wire structures in metalorganic vapor phase epitaxy (MOVPE) grown Ga531n•47As/hiP and in GaIn15As/GaAs have been fabricated by electron beam lithography and subsequent metalorganic reactive ion etching (MORE) and/or wet etching. The dry etching was optimized for low-damage conditions and for maskto-wafer pattern transfer. In the wet etching process, an underetching was implemented in order to reduce the iinewidth defined by the etching mask. A wet etching step has been used after the dry etching for removal of the partly damaged surface region and for smoothening of the sidewalls of the wires. Differently processed areas were excited selectively by low-temperature cathodoluminescence (CL) from which the optical quality of the wire material was evaluated and blue shifts for the wires as large as 10 meV were observed. Individual wires have also been imaged and effects of one-dimensional exciton diffusion have been probed.

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“…Epiquip AB in Lund is acknowledged for assistance in growth of the quantum well structures. 6. REFERENCES…”

Section: Resultsmentioning

confidence: 98%

<title>Fabrication and imaging of quantum-well wire structures</title>

et al. 1992

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“…(6) The surface roughness after oxygen ion beam machining using an ECR-type apparatus is about four times less than that using a Kaufman-type apparatus. (7) The surface roughness increases with an increase in ion incident angle, and decreases with an increase in ion energy. At normal incidence the surface roughness for 1000 eV is about 2.5 times less than that for 100 eV.…”

Section: Discussionmentioning

confidence: 99%

“…Due to an electrodeless discharge system, the ion source can produce beams of excellent uniformity and stability, ionize various gases and produce ion beams of 20 mm in effective diameter accelerated up to 2 kV [6]. Magnets are arranged around the periphery of the discharge chamber for the microwave ECR condition (magnetic flux density, 875 G) which enables the plasma to effectively absorb the microwave energy at low gas pressures of 10 −3 to 10 −1 Pa [7]. The ion extraction system, employing a broad beam of 35 mm (full width at half-maximum (FWHM)) diameter, comprises three stainless-steel grids 1 mm apart with aligned multiple holes 2 mm in diameter.…”

Section: Experimental Apparatus and Proceduresmentioning

confidence: 99%

Reactive ion beam machining of diamond using an ECR-type oxygen source

Kiyohara

Miyamoto

1996

Nanotechnology

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Reactive ion beam machining of diamond chips with oxygen ions using a Kaufman-type apparatus has been investigated. This paper reports machining characteristics of single crystal diamond chips processed with an oxygen ion beam using an electron cyclotron resonance (ECR)-type apparatus. The specific machining rate increases with increase in ion energy, reaches a maximum rate at an ion energy of 300 eV, then decreases gradually with further increase in ion energy. The specific machining rate obtained with 1000 eV oxygen ions increases with increase in ion incident angle and reaches a maximum rate at an ion incident angle of 40 • , then decreases with increase in ion incident angle. The specific machining rate obtained with 500 eV oxygen ions decreases with increase in ion incident angle. The specific machining rate for 500 eV oxygen ions at an ion incident angle of 0 • is 12 times greater than that for argon ions. Futhermore, the surface roughness of diamond chips before and after oxygen ion beam machining was evaluated using an atomic force microscope (AFM) and a scanning electron microscope (SEM). It was found that the surface roughness increases with increase in ion incident angle, and decreases with increase in ion energy.

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