Comparative studies on the physical and electronic properties of reactively sputtered ZnO and ZnON semiconductors

Ok, Kyung‐Chul; Jeong, Hyun‐Jun; Lee, Hyun-Mo; Park, Jozeph; Park, Jin‐Seong

doi:10.1016/j.ceramint.2015.07.110

Cited by 30 publications

(18 citation statements)

References 22 publications

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“…where m* is effective mass and h is Planck's constant. Assuming m* = 0.19 m 0 for ZnON [6], [25] and using I 0 = 1.6 × 10 −10 A leads to B = 0.83 eV. Thus, our C-V and I-V estimates for B are quite similar.…”

Section: A Room Temperature I-v and C-v Measurementssupporting

confidence: 52%

ZnON MIS Thin-Film Diodes

Daut

Wager

Nathan

2019

IEEE J. Electron Devices Soc.

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Zinc oxynitride metal-insulator-semiconductor diodes are fabricated and characterized. Although these devices display excellent rectification, their temperature-dependent current-voltage characteristics are not explicable using analysis methodologies currently available in the literature. Therefore, we employ a simple curve fitting strategy in order to elucidate measured trends. It is found that the forward current trends are describable using three parameters, i.e., reverse saturation current, ideality factor, and series resistance, whereas the reverse current temperature dependence only requires one parameter, i.e., shunt resistance. All four of these model parameters are found to be strongly temperature dependent.

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Section: A Room Temperature I-v and C-v Measurementssupporting

confidence: 52%

ZnON MIS Thin-Film Diodes

Daut

Wager

Nathan

2019

IEEE J. Electron Devices Soc.

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“…The implementation of ZnON semiconductors may thus be anticipated to be more cost-effective than the usual multi-cation compounds such as IGZO, which necessitate the use of relatively expensive raw materials such as indium or gallium. Although research has recently been carried out by several groups on the electrical performance and reliability of ZnON-based thin-film devices 23 24 25 26 27 28 29 , a proper understanding of the material properties in terms of their microstructure and chemical composition is not available in the literature thus far. The present work involves an extensive study of the influence of the deposition conditions on the physical and electronic properties of the resulting reactively sputtered ZnON layers.…”

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confidence: 99%

A study on the electron transport properties of ZnON semiconductors with respect to the relative anion content

Park

Kim

et al. 2016

Sci Rep

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High-mobility zinc oxynitride (ZnON) semiconductors were grown by RF sputtering using a Zn metal target in a plasma mixture of Ar, N2, and O2 gas. The RF power and the O2 to N2 gas flow rates were systematically adjusted to prepare a set of ZnON films with different relative anion contents. The carrier density was found to be greatly affected by the anion composition, while the electron mobility is determined by a fairly complex mechanism. First-principles calculations indicate that excess vacant nitrogen sites (VN) in N-rich ZnON disrupt the local electron conduction paths, which may be restored by having oxygen anions inserted therein. The latter are anticipated to enhance the electron mobility, and the exact process parameters that induce such a phenomenon can only be found experimentally. Contour plots of the Hall mobility and carrier density with respect to the RF power and O2 to N2 gas flow rate ratio indicate the existence of an optimum region where maximum electron mobility is obtained. Using ZnON films grown under the optimum conditions, the fabrication of high-performance devices with field-effect mobility values exceeding 120 cm2/Vs is demonstrated based on simple reactive RF sputtering methods.

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“…It has been reported that thermal annealing after deposition significantly improves the electrical properties of a‐ZnON . We investigated the influence of annealing temperature and atmosphere on ZnON films deposited at RT and 0.3 Pa.…”

Section: Resultsmentioning

confidence: 99%

Electron transport mechanism in rf‐sputtered amorphous zinc oxynitride thin films

Reinhardt

Frenzel

Wenckstern

et al. 2016

Physica Status Solidi (a)

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Abstractauthoren We discuss the carrier transport mechanism in amorphous zinc oxynitride (ZnON) thin films fabricated by means of long‐throw magnetron sputtering. ZnON films were radio‐frequency sputtered from a metallic zinc target in a reactive atmosphere consisting of N2, O2, and Ar. The electrical conductivity of the films was controlled via variation of the deposition pressure and substrate temperature. Room temperature deposition yields amorphous, n‐type semiconducting ZnON thin films with a maximum Hall mobility of 25thinmathspacecm2V−1s−1 and carrier concentrations of ∼1018thinmathspacecm−3. The mobility can be further increased up to the 40thinmathspacecm2V−1s−1 range by moderate substrate heating or annealing up to 200∘normalC while maintaining the amorphous phase. From temperature‐dependent Hall effect measurements, we deduced that a percolation conduction model is most likely for the electron transport in the as‐grown ZnON thin films. For annealed samples, a quasi‐metallic behavior is observed.

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Comparative studies on the physical and electronic properties of reactively sputtered ZnO and ZnON semiconductors

Cited by 30 publications

References 22 publications

ZnON MIS Thin-Film Diodes

ZnON MIS Thin-Film Diodes

A study on the electron transport properties of ZnON semiconductors with respect to the relative anion content

Electron transport mechanism in rf‐sputtered amorphous zinc oxynitride thin films

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