Comparative Study on Metal–Ferroelectric–Insulator–Semiconductor Diodes Composed of Poly(vinyliden fluoride-trifluoroethylene) and Poly(methyl metacrylate)-Blended Poly(vinyliden fluoride-trifluoroethylene)

Abstract

We have investigated a solution of tetrabutylammonium iodide (TBAI) in the polar solvent formamide (FA) using angle-resolved photoelectron spectroscopy at the Berlin Electron Storage Ring for Synchrotron Radiation (BESSY). The concentration was set to 0.5 molality. We have evaluated the signals from C Is pertaining to TBAL and FA sepmtely. varying the photon energy between 310 and 540 eV as well as the bemission angle with respect to the surface normal. The combination of these data with earlier results from AMPS obtalned by Siegbahn and co-workers allowed us to establish a concentration-depth profile of the surface-active salt TBAI. For this purpose we have employed a new theoretical formulation and developed a new elaborate fitting program based on a genetic algorithm. The concentration of the salt could be followed down to a depth of about 45 8, below the surface. Cross sections for the inelastic energy loss of electrons in the liquid could be established as a function of electron energy. Comparison with conventional surface tension measurements allowed us to derive absolute values for the cross sections.

Fabrication of (Bi,Pr)(Fe,Mn)O3 Thin Films on Polycrystalline Diamond Substrates by Chemical Solution Deposition and Their Properties

“…Ferroelectric random access memories (FeRAM) have been attracting attention because of nonvolatile, low-power consumption, and high-speed operation. [1][2][3][4] In the last several years, in order to obtain the further performance (such as high-temperature operation) of FeRAM device applications, ferroelectrics have been integrated with the wide-gap semiconductors, such as SiC, GaN, and diamond, and their structural and electrical properties were reported. [5][6][7][8][9][10] However, in most cases, Pb(Zr,Ti)O 3 (Curie temperature T c : $360 C) was used as a ferroelectric material in the integrated structure.…”

Improvement in Ferroelectric Fatigue Endurance of Poly(methyl metacrylate)-Blended Poly(vinylidene fluoride–trifluoroethylene)

“…Thus, in this study, we investigate the highelectric field fatigue endurance of P(VDF-TrFE) films by forming metal-ferroelectric-metal (MFM) capacitors, and then attempt to improve the endurance by blending a small amount of poly(methyl metacrylate) (PMMA) into P(VDF-TrFE). 9,10) Particular attention is paid to determining the optimum blending conditions of PMMA.…”