Completely planarized W plugs using MnO/sub 2/ CMP

Abstract

In tungsten (W) polishing, MnO 2 has been used as an abrasive to form plugs without etching holes in seams during CMP. We found that MnO 2 polishes 1.5 times faster than the standard A1 2 O 3 abrasive, and can be completely removed during the cleaning process.

Chemical Mechanical Polishing of Polyarylether Low Dielectric Constant Layers by Manganese Oxide Slurry

“…[10][11][12] Polishing conditions were, pad: IC 1000 (Rodel Inc.); rotation speed: 30 rpm; pressure: 163 g/cm 2 ; pH of slurry, fumed silica: 10.4 and MnO 2 : 7.0. The removal rate was measured in unpatterned layers .…”

“…Polishing of these layers was performed by commercially available fumed silica slurry (SC-1, Cabot Inc.) and MnO 2 and Mn 2 O 3 slurries manufactured by Mitsui Metal and Smelting Co. Ltd., Japan. [10][11][12] Polishing conditions were, pad: IC 1000 (Rodel Inc.); rotation speed: 30 rpm; pressure: 163 g/cm 2 ; pH of slurry, fumed silica: 10.4 and MnO 2 : 7.0. The removal rate was measured in unpatterned layers .…”

“…9 Recently, slurries based upon MnO 2 abrasives have been reported for CMP of the oxide layer. [10][11][12] Since the surface of the polished layer reacts to the oxygen atoms at the tails of MnO 2 needle crystal, the surface is easily oxidized or reacted by this polishing. 12 Therefore, enhancement of the chemical reaction with the organic molecules from the low k dielectrics can be expected.…”

Tungsten Film Chemical Mechanical Polishing Using MnO2 Slurry

“…[12][13][14][15] In our prior work, we demonstrated that MnO 2 slurry polishes W films without using an additional liquid oxidizer, and does not etch the seam of the plug during the CMP. 16) In this paper, we have studied the CMP mechanism using MnO 2 slurry from the thermodynamic and Mohs hardness points of view.…”

Effect of Mn-Based Slurries on Chemical Mechanical Polishing of SiC Substrates

“…Therefore, Mn oxide particles have begun to attract attention for use as polishing particles. 18,19 The objective of this study was to use Mn-based oxide particles to prepare slurries for CMP of SiC substrates. The experimentally observed material removal rate and surface morphology were analyzed to determine the effects of pH and temperature of the Mn-based slurries on the SiC-CMP process characteristics.…”