Defects in pure and halogen compensated cadmium telluride grown by the THM method

Stuck, R.; Cornet, A; Scharager, C.; Siffert, P.

doi:10.1016/0022-3697(76)90121-9

Cited by 26 publications

(7 citation statements)

References 20 publications

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“…This is in agreement with [11], where it had been showed that at high temperature annealing A − Cl decay began at 500 ° C and at 800 °C it was accomplished. But it contradicts earlier theoretical calculations made in [12,13] …”

Section: Resultscontrasting

confidence: 64%

Point defect structure of CdTe〈Cl〉 crystals at high temperatures

Fochuk

Panchuk

Shcherbak

et al. 2005

phys. stat. sol. (c)

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Section: Resultscontrasting

confidence: 64%

Point defect structure of CdTe〈Cl〉 crystals at high temperatures

Fochuk

Panchuk

Shcherbak

et al. 2005

phys. stat. sol. (c)

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“…On the other hand, the hole density p in Ag-doped CdTe is determined by the remaining density of free Ag\r, acceptors [AgaIel = 11 . (12) n p = K , .…”

Section: (11)mentioning

confidence: 99%

Interdiffusion in doped and undoped semiconductor alloys HgwCd1−wTe

Leute

Schmidtke

Stratmann

et al. 1981

Phys. Stat. Sol. (a)

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From the Hg‐ and Cd‐concentration profiles recorded by an electron microprobe the metal interdiffusion coefficient for the semiconductor alloys HgwCd1–wTe is determined as a function of the mass fraction w and the temperature. To evaluate a defect model for this system undoped Te saturated samples, undoped metal saturated samples, and samples with an intermediate composition within the stability region of the compounds are studied. In adition metal saturated Ag‐ and In‐doped samples are investigated. The interdiffusion coefficient for Hg and Cd in undoped diffusion couples is nearly independent of the deviation from stoichiometry. For the HgTe‐rich side of the alloy system this can be explained by a relatively high thermal Frenkel disorder which exceeds the defect concentration attainable by varying the mercury pressure. Doping the crystals with In or Ag obviously increases the interdiffusion coefficient over the whole range of the alloy composition. In the case of In‐doped HgTe and CdTe and Ag‐doped HgTe this is due to prevailing metal vacancies, whereas in the case of Ag‐doped CdTe the metal interstitials predominate.

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“…Theoretical calculation of defect equilibria of CdTe was performed first by de Nobel (4, 5) and many works have been published later (6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16). de Nobel has proposed the defect model in which cadmium vacancy (Vcd) is a doubly ionizable native accepter and interstitial cadmium (CdiJ is a singly ionizable native donor.…”

mentioning

confidence: 99%

Effect of Excess Component Element during LPE on Electrical Properties of CdTe

Saraie

Kitagawa

Tanaka

1979

J. Electrochem. Soc.

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Epitaxial layers of CdTe from CdC12 solution show n-type conduction and their carrier concentration increases with the increase in the amount of excess Cd added to the solution during growth. The maximum available value is 4.8 X 101~/cm 8. Carrier concentrations of p-type substrates change after growth from that of before growth and they decrease with the increase in the amount of exceess Cd. High temperature defect equilibria have been calculated in which cadmium vacancy, interstitial cadmium, and vacancy-chloi~ine associates are taken into account. Equilibrium constants of formation of those associates have been determined. The carrier concentrations at room temperature have been explained by assuming the precipitation of some fraction of the native defects into neutral clusters during quenching.

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Defects in pure and halogen compensated cadmium telluride grown by the THM method

Cited by 26 publications

References 20 publications

Point defect structure of CdTe〈Cl〉 crystals at high temperatures

Point defect structure of CdTe〈Cl〉 crystals at high temperatures

Interdiffusion in doped and undoped semiconductor alloys HgwCd1−wTe

Effect of Excess Component Element during LPE on Electrical Properties of CdTe

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