2006
DOI: 10.1088/0268-1242/21/6/021
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Determination of the characteristic parameters of Sn/n-GaAs/Al–Ge Schottky diodes by a barrier height inhomogeneity model

Abstract: A study on parameters of the Sn/n-GaAs Schottky barrier diode (SBD) fabricated on an n-type GaAs substrate has been made. The Sn/n-GaAs SBD has shown a nearly ideal behaviour with ideality factor and barrier height (BH) values of 1.081 and 0.642 eV, respectively, from the experimental forward-bias current-voltage (I-V) characteristics. A BH value of 0.724 eV has been obtained from the experimental reverse-bias capacitance-voltage (C-V) characteristics. An accurate theoretical modelling of the effect of the pre… Show more

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Cited by 23 publications
(22 citation statements)
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“…That is, the BHs become smaller as the ideality factors increase. This finding may be attributed to lateral inhomogeneities of the BHs in Schottky diodes [27][28][29][30][31][32][33][34][35][36][37]. In addition, it has been mentioned by Tung and co-workers [27,28] and Mönch and co-workers [29][30][31][32][33] that higher ideality factors among identically prepared diodes were often found to accompany lower observed BHs.…”
Section: Resultsmentioning
confidence: 99%
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“…That is, the BHs become smaller as the ideality factors increase. This finding may be attributed to lateral inhomogeneities of the BHs in Schottky diodes [27][28][29][30][31][32][33][34][35][36][37]. In addition, it has been mentioned by Tung and co-workers [27,28] and Mönch and co-workers [29][30][31][32][33] that higher ideality factors among identically prepared diodes were often found to accompany lower observed BHs.…”
Section: Resultsmentioning
confidence: 99%
“…2. The straight line of the experimental effective BHs versus ideality factors plot that corresponds to the region with large BHs and low patch density below n ffi 1.1 [29][30][31][32][33][34][35][36][37] was extrapolated to n = 1 for determining the laterally homogeneous BH.…”
Section: Resultsmentioning
confidence: 99%
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