Determining electrical and dielectric parameters of Al/ZnS-PVA/p-Si (MPS) structures in wide range of temperature and voltage

Baraz, Nalan; Yücedağ, İ̇brahim; Azizian‐Kalandaragh, Yashar; Altındal, Ş.

doi:10.1007/s10854-018-9391-7

Cited by 8 publications

(1 citation statement)

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“…This region, where a sharp increase in absorbance values is observed, is the main absorption region of the film. To determine the optical bandgap of GO film, Tauc's model was used and the plot of ( Ahν ) 2 versus the photon energy hν and the absorption bandgap ( E g ) can be determined by the equation: ( Ahν ) 2 = a ( hν − Eg ), [ 21 ] where hν is the photon energy (eV), A is the absorption coefficient, a is a constant, and Eg is the bandgap. The ( Ahν ) 2 versus hν plot of GO film is shown in Figure 3a.…”

Section: Resultsmentioning

confidence: 99%

The Structural, Optical, and Electrical Characterization of Ti/n‐InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method

Çatır

2020

Physica Status Solidi (a)

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Ti/GO/n-InP Schottky barrier diode (SBD) is obtained by growing graphene oxide (GO) film on n/InP semiconductor using easy and economical spray pyrolysis method. The effect of GO as the interfacial layer on device performance of Ti/GO/n-InP SBD is investigated in detail. The optical absorbance spectra show that bandgap energy of the GO film is 3.57 eV. The optical transmittance value of 79.5% is in consistent with the absorbance spectra of GO film. The barrier heights (BHs) that are estimated for the Ti/GO/n-InP SBD vary from 0.263 to 0.980 eV (I-V) and 1.328 to 1.006 eV (C-V) from the I-V and C-V measurements in the temperature range of 100-400 K. The contradiction between the BHs from the I-V and C-V characteristics is discussed. The mean BH values are found to be Φ b01 ¼ 0.98 eV (250-400 K) and Φ b02 ¼ 0.73 eV (100-250 K) from the Φ b0-1/2kT plot. From the modified Richardson plots based on a Gaussian distribution of BH, Φ b01 ¼ 0.93 (250-400 K) and Φ b02 ¼ 0.69 eV (100-250 K) and A* is calculated to be 12.44 and 12.73 A cm À2 K À2 , respectively. The I-V-T and C-V-T measurements demonstrate that carrier transport mechanism of Ti/GO/n-InP is well explained by thermionic emission (TE) mechanism with a double Gaussian distribution of the Schottky barrier heights (SBHs).

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Section: Resultsmentioning

confidence: 99%