Developing One-Dimensional Electronically Tunable Microwave and Millimeter-Wave Components and Devices Towards Two-Dimensional Electromagnetically Reconfigurable Platform

Adhikari, Sulav; Wu, Ke

doi:10.2528/pier13123006

Cited by 11 publications

(5 citation statements)

References 53 publications

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“…Basically, it is known that waveguide act as a high pass filter and pass the energy above the cut‐off frequency . Metallic post or metallic screw can be used as an impedance changing device in a waveguide structure . Depending upon depth of penetration of post or screw, it acts as an inductive or capacitive (impedance changing device) as shown in Figure .…”

Section: Siw Bandpass Filter Designmentioning

confidence: 99%

K band class‐C MESFET based frequency quadrupler with highly selective SIW bandpass filter for inter satellite communication

R.N.Patel

Patel

2016

Micro & Optical Tech Letters

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This article presents the single stage active frequency quadrupler design for generating a tone in the K band (23.5 GHz) frequency range using GaAs MESFET device. Harmonics current generation characteristics of GaAs MESFET (NE900000) is modeled and analyzed in reference with gate voltage. Based on this, its optimum operating class‐C is decided for its application as a frequency quadrupler. Using this model and introducing resonator (Idler) based harmonic rejection techniques, a narrowband −0.310 dBm output power ×4 frequency multiplier from C‐band to K‐band implemented using 0.5 μm GaAs MESFET. As the device operated in class‐C operating condition, it produces harmonics content due to clipping of output signal. At the output of the proposed multiplier design, a highly selective surface integrated waveguide (SIW) based bandpass filter (with Q is better than 120) is attached, which provides excellent rejection of fundamental component (>90 dBc) and other harmonics assuring minimum rejection of 30 dBc. The proposed design consumes 60 mW power and provides ∼−7 dB conversion gain with input power having 7 dBm. Feasibility and layout geometry of the proposed design has been evaluated and simulated on the substrate RT‐Duroid5880 using Agilent ADS software. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:767–776, 2016

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Section: Siw Bandpass Filter Designmentioning

confidence: 99%

K band class‐C MESFET based frequency quadrupler with highly selective SIW bandpass filter for inter satellite communication

R.N.Patel

Patel

2016

Micro & Optical Tech Letters

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“…Metallic post or metallic screw can be used as an impedance changing device in a waveguide structure [12]. Depending upon depth of penetration of post or screw, it acts as an inductive or capacitive (impedance changing device) as shown in figure 7 [13,14].…”

Section: Design Of Band Pass Filter From Siw Structurementioning

confidence: 99%

Design of highly selective bandpass filters for communication between two satellites at K band frequency

Patel

Vala

Goswami

et al. 2015

2015 IEEE 16th Annual Wireless and Microwave Technology Conference (WAMICON)

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This paper represents design of Substrate integrated waveguide (SIW) based bandpass filters for the centre frequency of 22.5 GHz and 23.5 GHz for communication between two satellites. A proposed filter has been designed for the transceiver used in communication linking and ranging between two satellites. However, the allotted band for satellites communication is 22.5-23.5GHz so that we have to design very narrowband bandpass filter which isolated two frequencies having bandwidth less than 170 MHz and quality factor is more than 100. Simulation of the proposed structures have been carried out by Ansoft high frequency structural simulator (HFSS) and it shows that the proposed structures having bandwidth is 1l0MHz and quality factor is 203 which reasonable for isolation. An equivalent LC circuit has been derived of the proposed structure and it is verified by the advanced designing system (ADS)

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“…Today's solutions to overcome these challenges are load modulation e.g. Doherty [11], or supply modulation concepts, such as envelope tracking [12]. A major disadvantage of such concepts, particularly in CR and SDR based systems, are bandwidth limitations [11] and form factor [12].…”

Section: Introductionmentioning

confidence: 99%

“…Doherty [11], or supply modulation concepts, such as envelope tracking [12]. A major disadvantage of such concepts, particularly in CR and SDR based systems, are bandwidth limitations [11] and form factor [12]. The most revolutionary concept in terms of efficiency and operating bandwidth is the digital microwave power amplifier [13], [14].…”

Section: Introductionmentioning

confidence: 99%

Concept for Continuously Tunable Output Filters for Digital Transmitter Architectures

et al. 2019

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This paper presents a novel output filter approach for continuously frequency-tunable digital power amplifiers, suitable for future seamless and band-less applications in 5G, e.g. for cognitive radios (CR). The presented tunable output filter is based on a multi-bandstop lowpass response to regenerate the original microwave signal at the output of the digital amplifier stage by suppressing unwanted frequency components. Compared to conventional tunable bandpass solutions, it offers higher tunability, higher linearity, good power handling capability and moderate losses especially around the carrier frequency. A tunable power amplifier (PA) demonstrator consisting of a 4-stage digital GaN PA MMIC and the novel tunable filter, is designed and fabricated for a carrier frequency range from 1 GHz to 3 GHz. Tunability is achieved by using commercial barium strontium titanate (BST) varactors. Small signal measurements were performed to evaluate tunability and suppression capabilities of the novel filter structure, which reveal a frequency tunability of 67 % with a suppression level of at least 13 dB for the undesired frequency components. The proposed filter structure exhibits a linearity over the tuning range with an OIP3 between 66 dBm to 70 dBm and high power handling capability. Finally, the performance analysis of the tunable PA demonstrator shows an peak efficiency of 70 %. Due to frequency limitations of the used PA stage, the efficiency slowly degrades to 20 % at the upper frequency band edge. Simultaneously, the output power varies between 27 dBm to 31 dBm.INDEX TERMS Tunable circuits and devices, microwave power amplifiers, digital amplifiers, GaN, tunable filters, BST.

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Developing One-Dimensional Electronically Tunable Microwave and Millimeter-Wave Components and Devices Towards Two-Dimensional Electromagnetically Reconfigurable Platform

Cited by 11 publications

References 53 publications

K band class‐C MESFET based frequency quadrupler with highly selective SIW bandpass filter for inter satellite communication

K band class‐C MESFET based frequency quadrupler with highly selective SIW bandpass filter for inter satellite communication

Design of highly selective bandpass filters for communication between two satellites at K band frequency

Concept for Continuously Tunable Output Filters for Digital Transmitter Architectures

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