Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model

Vandamme, E.P.; Schreurs, Dominique; Dinther, C van; Badenes, G.; Deferm, L.

doi:10.1016/s0038-1101(01)00108-3

Cited by 27 publications

(9 citation statements)

References 16 publications

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“…RF small-signal characterization is paramount due to the trade-off between DC bias and RF performance during device operation [7]. Therefore, RF small-signal behavior was measured to understand the upper frequency limitation of device operation.…”

Section: Device Performances Of Power Transistormentioning

confidence: 99%

Optimum bias of power transistor in 0.18μm CMOS technology for Bluetooth application

Hsu¹,

Lee²

2006

Solid-State Electronics

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Section: Device Performances Of Power Transistormentioning

confidence: 99%

Optimum bias of power transistor in 0.18μm CMOS technology for Bluetooth application

Hsu¹,

Lee²

2006

Solid-State Electronics

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“…1; it is similar to the one used in all FETs [3], [5]. The static drain current equation is originally based on the Angelov's model developed for III-V devices [6], but it has been modified in order to be suitable for MOS devices (1) All terms , , ,…”

Section: Description and Extraction Of The Modelmentioning

confidence: 99%

“…Then, the dc current parameters values are determined by adjusting the current's equation (1) on the measured dc current . Using the extrinsic elements values, a de-embedding procedure allows to extract the bias dependent intrinsic elements [3], [10]. This allows to determine the charge parameters which are extracted from the measured intrinsic capacitors and .…”

Section: Description and Extraction Of The Modelmentioning

confidence: 99%

“…The existing ones are mainly physics based, or look-up table based. Physical models, like the well-known BSIM, are accurate, scalable both on the transistor's dimensions and technology, but generally the parameter's extraction is time consuming, requiring much technological data [2], [3]. On the other hand, look-up table models, showing accuracy and quick to extract, are not scalable and their use is limited to the measured operating range (in terms of voltage bias) [3].…”

Section: Introductionmentioning

confidence: 99%

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A new empirical nonlinear model for sub-250 nm channel MOSFET

Siligaris

Dambrine

Schreurs

et al. 2003

IEEE Microw. Wireless Compon. Lett.

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An empirical nonlinear model for sub-250 nm channel length MOSFET is presented which is useful for large signal RF circuit simulation. Our model is made of both analytical drain current and gate charge formulations. The drain current expression is continuous and infinitely derivable, and charge conservation is taken into account, as the capacitances derive from a single charge expression. The model's parameters are first extracted, prior the model's implementation into a circuit simulator. It is validated through dc, ac, and RF large signal measurements compared to the simulation.

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“…Other models are simple to implement as in Refs. 20–23. However, as mentioned before, their accuracy could be limited.…”

Section: Introductionmentioning

confidence: 97%

Neural-space mapping-based large-signal modeling for MOSFET

Gao

2011

Int J RF and Microwave Comp Aid Eng

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In this article, a large-signal modeling approach based on the combination of equivalent circuit and neuro-space mapping modeling techniques is proposed for MOSFET. In order to account for the dispersion effects, two neuro-space (S) mapping based models are used to model the drain current at DC and RF conditions, respectively. Corresponding training process in our approach is also presented. Good agreement is obtained between the model and data of the DC, S parameter, and harmonic performance for a 0.13 lm channel length, 5 lm channel width per finger and 20 fingers MOSFET over a wide range of bias points, demonstrating the proposed model is valid for DC, small-signal and nonlinear operation. Comparison of DC, S-parameter, and harmonic performance between proposed model and empirical model further reveals the better accuracy of the proposed model.

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Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model

Cited by 27 publications

References 16 publications

Optimum bias of power transistor in 0.18μm CMOS technology for Bluetooth application

Optimum bias of power transistor in 0.18μm CMOS technology for Bluetooth application

A new empirical nonlinear model for sub-250 nm channel MOSFET

Neural-space mapping-based large-signal modeling for MOSFET

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