Development of InSb dry etch for mid-IR applications

Pusino, Vincenzo; Xie, Chengzhi; Khalid, A.; Thayne, Iain; Cumming, David R. S.

doi:10.1016/j.mee.2015.12.014

Cited by 5 publications

(1 citation statement)

References 16 publications

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“…Methane-based plasmas have been used on metalloidcontaining materials as ZnSe [15,16], GaAs [17], GaSb [17,18], InSb [19] and Ge-As-Se [20], aiming for patterned nanostructures. The etching processes of III-V and II-VI semiconductors were mostly focused on the etch rate and the imaging of patterned profiles.…”

Section: Introductionmentioning

confidence: 99%

Mass spectrometry and in situ x-ray photoelectron spectroscopy investigations of organometallic species induced by the etching of germanium, antimony and selenium in a methane-based plasma

Meyer,

Girard,

Bouška

et al. 2023

Plasma Sources Sci. Technol.

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Organometallic positive ions were identified in Inductively Coupled Plasmas by means of Mass Spectrometry (MS) during the etching of Ge, Sb, Se materials. A preliminary study was focused on identifying MxHy+ (M = Ge, Sb, Se) positive ion clusters during a H2/Ar etching process. The methane addition to the H2/Ar mixture generates CHxreactive neutral species. The latter react with the metalloids within gas phase to form MxCyHz+ organometallic ions. In addition, the etching of Sb2Se3 and Ge19.5Sb17.8Se62.7 bulk targets forms mixed products via ion-molecule reactions as evidenced by the presence of SeSbCxHy+ ion clusters. Changes in surface composition induced by the newly formed organometallic structures were investigated using in situ X-ray Photoelectron Spectroscopy (XPS). In the case of the Ge and Sb surfaces, (M)-M-Cx environments broadened the Ge 2p3/2, Ge 3d, Sb 3d and Sb 4d spectra to higher values of binding energy. For the Se surface, only the hydrogen and methyl bonding could explain the important broadening of the Se 3d core level. It was found that the Ge39Se61 thin film presents an induced (Ge)-Ge-Se entity on the Ge 2p3/2 and Ge 3d core levels.

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