Device simultaneous determination of the source and cavity parameters of a microcavity light-emitting diode

Abstract

Detuning between the emission line and the Fabry-Pérot wavelength is a critical parameter for microcavity light-emitting diode (MCLED) design with regard to the efficiency and emission directionality. We present here a method to measure simultaneously the detuning and the linewidth of the source emitter on the device itself. This method uses numerical simulations and a fitting procedure with the angular emission pattern measured on the MCLED. It is accurate, nondestructive and easy to implement.

Zinc Sulphide Overlayer Two-Dimensional Photonic Crystal for Enhanced Extraction of Light from a Micro Cavity Light-Emitting Diode

“…It is well known that etching a photonic crystal into the p-type GaN layer does enhance the light extraction from a III-nitride LED. [22][23][24][25][26][27][28][29][30][31] As in the present work, the surface Bragg grating diffracts the internally trapped light. Unfortunately, processing of p-type GaN is notorious for introducing a defective n-type surface layer, which can hamper current injection and introduce mid-gap states that absorb light emission.…”

Angular spectrum of visible resonant cavity light-emitting diodes

“…Nevertheless, recording the emission patterns for various wavelengths provides excellent insight into the subtleties of RCLED properties; in particular the effect of ͑de͒tuning of the underlying active layer emission relative to the normal incidence cavity resonance-a parameter known to be important in the overall performance of the device. [10][11][12] We are also able to comment on how the overall linewidth of a measured emission spectrum depends not only on the collection angle but also the detuning in the device structure-a point which is rarely mentioned in the general context of planar microcavities 5 and even less so with RCLEDs.…”

Structural Effects on Highly Directional Far-Field Emission Patterns of GaN-Based Micro-Cavity Light-Emitting Diodes With Photonic Crystals

“…According to the micro-cavity theory [4], the GaN cavity thickness and position of QW layers in the GaN MCLED with bottom metallic reflector mirror is an important factor that strongly modifies light emitting characteristics such as the LEE, spontaneous emission rate, and far-field emission patterns [12], [13]. The light emission intensity is controlled by two factors.…”