Disorder-induced allowed-forbidden phonon splittings in ion-etched epitaxial InP

Maslar, James E.; Kisting, Scott; Bohn, Paul W.; Adesida, I.; Ballegeer, D. G.; Caneau, C.; Bhat, R.

doi:10.1103/physrevb.46.1820

Cited by 6 publications

(4 citation statements)

References 20 publications

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“…The observation of scattering strongly adhering to the selection rules indicates a high degree of crystalline order, while observation of symmetry-forbidden scattering is taken as evidence that the symmetry of the crystal has been lowered, e.g., by process-induced defects. 38,39 Thus, observation of the TO mode in the dipole-forbidden geometries of Fig. 8 is wholly consistent with the lattice disruption evident in the micrographs.…”

Section: Resultssupporting

confidence: 81%

Arsenic Oxide Microcrystals in Anodically Processed GaAs Electrochemical Growth, Spectroscopy, and Morphology

Bohn

2000

J. Electrochem. Soc.

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Anodic etching of GaAs wafers in concentrated HCl produces many As2O3 microcrystals (1–50 μm in size) on the GaAs substrate. The etching process and the nature of the luminescence from these GaAs surfaces have been explored in detail. The etch pits are initiated at point defect sites, not extended defects. High HCl concentration, high current density, as well as long etching times facilitate As2O3 microcrystal growth. Polarization‐dependent Raman spectroscopy identified the As2O3 microcrystals and accessed symmetry changes of the GaAs surface induced by the electrochemical processing. Raman signals from quantum‐size effect confined phonons in GaAs were not observed. Far‐field photoluminescence of such samples shows a strong emission band centered around 540 nm. Spatially resolved spectroscopy and imaging (cathodoluminescence and near‐field scanning optical microscopy) unambiguously indicate that the 540 nm emission comes from many weak emitters false(As2O3false) . A few strong emitters originating from amorphous impurity inclusions are also identified in samples prepared in a macor cell. © 2000 The Electrochemical Society. All rights reserved.

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Section: Resultssupporting

confidence: 81%

Arsenic Oxide Microcrystals in Anodically Processed GaAs Electrochemical Growth, Spectroscopy, and Morphology

Bohn

2000

J. Electrochem. Soc.

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“…Implanted samples show extra signals caused by implant-induced disorder (7)(8), which can be used to monitor crystal quality, in particular, the GaAs-like disorder-activated transverse optical (DATO) mode at ~244 cm -1 (9), also known as the R* mode (6,8,10), and the GaAs TO phonon (~255 cm -1 ), which is usually forbidden in backscattering from (100) InGaAs surface. This implant disorder is also manifested in the Figure 1 (11)(12)(13)(14). Notice that the rise in L+ peak is accompanied by the diminished GaAs-like LO intensity.…”

Section: Resultsmentioning

confidence: 65%

“…The last two processes are known to produce ultra shallow junctions (USJs) in a Si-based system (3)(4). For the F co-implant, we kept implant power at 3.8keV and dosage of 1E15 cm -2 ; in testing the flash anneal, we used an undoped III-V substrate, set the stage temperature at 500 o C, and varied the final flash temperature from 700 to 900 o C. The characterization scheme includes high resolution Xray diffraction (HRXRD) (5), Raman spectroscopy (6)(7)(8)(9)(10)(11)(12)(13)(14), secondary ion mass spectrometry (SIMS), and Hall measurements. The typical sample was 5 mm x 5 mm; HRXRD and Raman measurements can be taken directly on the same sample because both techniques are non-contract and non-destructive.…”

Section: Methodsmentioning

confidence: 99%

Characterization Scheme for III-V Junction Development

Hung¹,

McDonough²,

Geer³

et al. 2011

ECS Trans.

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This work introduces a characterization scheme for junction development of conventional inversion mode bulk MOSFETs with novel III-V substrates, that effectively reduces the cost and development cycle. The scheme is composed of high resolution X-ray diffraction (HRXRD), Raman spectroscopy, secondary ion mass spectrometry (SIMS), and Hall measurements to monitor substrate thickness, composition, crystal quality, mobility, sheet resistance, and dopant activation. We applied this scheme to optimize the post-Si implant activation temperature, study the thermal stability of III-V substrates, and evaluate the impact of a fluorine (F) co-implant. Results show that the optimal post-implant rapid thermal anneal is about 750oC; a flash anneal for III-V should be kept below 900oC. F co-implantation reduces the junction depth but degrades the efficacy of dopant activation.

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“…Recently there has been a lot of attention given to the development of dry etch chemistries for InGaP, AlInP and AlGaP because of their importance in long-wavelength (630-680 nm) photonic devices and in heterojunction bipolar transistors (HBTs) [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Comparison of and plasma chemistries for dry etching of InGaAlP alloys

Hong

Lee

Santana

et al. 1996

Semicond. Sci. Technol.

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Etch rates above 1 µm min −1 have been obtained for BCl 3 /Ar and BCl 3 /N 2 plasma etching of In 0.5 Ga 0.5 P, Al 0.5 Ga 0.5 P and Al 0.5 In 0.5 P under electron cyclotron resonance (ECR) conditions. The etched surface morphologies are a strong function of the ratio of chlorine radicals to total ion density in the discharges, and are smoother in BCl 3 /Ar. Non-optimized etching conditions produce rough surfaces characterized by the presence of chlorine and boron-containing residues and substantial post-oxidation. We believe that the high ion flux available under ECR conditions provides efficient sputtering of the normally involatile InCl 3 , and thus a selvedge layer of this material is prevented from forming. Therefore the etch rates are much higher and the surface morphologies smoother in ECR discharges. The etch rates of Al x Ga 1−x P are much lower than the other two ternary compounds and are independent of composition over the range x = 0.05-0.70 for fixed plasma conditions.

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Disorder-induced allowed-forbidden phonon splittings in ion-etched epitaxial InP

Cited by 6 publications

References 20 publications

Arsenic Oxide Microcrystals in Anodically Processed GaAs Electrochemical Growth, Spectroscopy, and Morphology

Arsenic Oxide Microcrystals in Anodically Processed GaAs Electrochemical Growth, Spectroscopy, and Morphology

Characterization Scheme for III-V Junction Development

Comparison of and plasma chemistries for dry etching of InGaAlP alloys

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