Dissolution behavior of MgO thin film-barrier magnetic tunneling junctions

Improving the water-resistance of MgO-based metal–insulator–metal capacitors by inserting a BeO thin film grown via atomic layer deposition

“…In addition, the higher the ambient temperature, the more severe the degradation of MgO due to the enhanced kinetic energy of water molecules. 9 The operating temperature of a commercial memory device like dynamic random access memory (DRAM) could be as high as ∼95 °C. 14 Hence, an adjacent layer with higher heat conductivity would be beneficial to decrease the environmental temperature of the MgO film.…”

Very Long Term Stabilization of a 2D Magnet down to the Monolayer for Device Integration

“…However, when exposed to the air, MgO could react with water contained into the ambient atmosphere, resulting in lower performance as tunnel barrier for spintronics. 47 As we aim to use this ultrathin layer as a functional tunnel barrier, we develop a further processing step where we focus on a combined protection−encapsulation barrier stack as shown in Figure 2 where we protect it with an additional Al 2 O 3 layer that will be locally removed only in the last step of the device fabrication process. This will allow to protect MgO high quality over time and obtain its best performance for spintronics applications.…”

“…The MgO barrier is grown under the same conditions as previously described, but additionally, to prevent its degradation by moisture, 47 we further developed a removable Al 2 O 3 encapsulation scheme. After MgO growth, the ALD chamber is heated to 300 °C.…”

“…Flakes remain pristine, and no signs of degradation are observed after air exposure, denoting the high quality of the MgO passivation barrier to protect the 2D material, which otherwise would degrade as shown in Figure1a. However, when exposed to the air, MgO could react with water contained into the ambient atmosphere, resulting in lower performance as tunnel barrier for spintronics 47. As we aim to use this ultrathin layer as a functional tunnel barrier, we develop a further processing step where we focus on a combined protection−encapsulation barrier stack as shown in Figure2where we protect it with an additional Al 2 O 3 layer that will be locally removed only in the last step of the device fabrication process.…”

“…As we aim to use this ultrathin layer as a functional tunnel barrier, we develop a further processing step where we focus on a combined protection−encapsulation barrier stack as shown in Figure2where we protect it with an additional Al 2 O 3 layer that will be locally removed only in the last step of the device fabrication process. This will allow to protect MgO high quality over time and obtain its best performance for spintronics applications.The MgO barrier is grown under the same conditions as previously described, but additionally, to prevent its degradation by moisture,47 we further developed a removable Al 2 O 3 encapsulation scheme. After MgO growth, the ALD chamber is heated to 300 °C.…”