Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide

Abstract

We studied the effect of selective oxidation conditions on gate oxide characteristics. Selective oxidation in hydrogen-rich wet ambient at 850°C–950°C was found to generate defects both at the SiO2/Si interface and in oxide bulk, resulting in a higher stress-induced leakage current. The degradation of the device can be explained by the incorporation of hydrogen into the gate oxide during a high-temperature selective oxidation process. The plasma reoxidation process induced fewer defects due to radical oxidation at low temperature.

Silicon Trench Oxidation in Downstream of Microwave Oxygen Plasma

“…In these processes, an oxidation technique of three-dimensionally structured silicon is a recent demand. In ULSI, for example, the shallow trench isolation (STI) technique [5][6][7][8][9] is essential for realizing further integration. In this process, the so-called liner oxidation, in which the trench bottom corner is oxidized to make it round to facilitate the subsequent step of filling insulation materials into the trench by chemical vapor deposition (CVD), which has been conventionally employed in STI, becomes more severe, as the trench aspect ratio is further increased with the integration.…”