1995
DOI: 10.1116/1.587898
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Effect of ultrahigh nucleation density on diamond growth at different growth rates and temperatures

Abstract: Growth rate and quality variation of homoepitaxial diamond grown at elevated temperatures

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Cited by 28 publications
(4 citation statements)
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“…038 mm) in a fluid on Si substrate) was used to study the effect of nucleation density on the film quality, surface roughness and growth rate. 125 Samples pretreated and processed under similar conditions to minimise the effect of different deposition conditions on film morphology showed similar surface texture and morphology. Samples with the highest primary nucleation density had the smoothest film surfaces at all deposition conditions.…”
Section: Growth Of Diamondmentioning
confidence: 94%
“…038 mm) in a fluid on Si substrate) was used to study the effect of nucleation density on the film quality, surface roughness and growth rate. 125 Samples pretreated and processed under similar conditions to minimise the effect of different deposition conditions on film morphology showed similar surface texture and morphology. Samples with the highest primary nucleation density had the smoothest film surfaces at all deposition conditions.…”
Section: Growth Of Diamondmentioning
confidence: 94%
“…Both scratched and seeded samples were used for comparison. One experiment was conducted using source gases at flow rates of 1.5 sccm CH 4 relatively low, yielding a discontinuous film with large grains of approximately 1 µm size after 8 h of deposition. The codeposited seeded substrate shows a fine-grained morphology with an average grain size of less than 1 µm.…”
Section: Resultsmentioning
confidence: 99%
“…2,3 Another growth preparation process that is frequently used is deliberate seeding of the substrate surface with diamond particles, which in effect negates the issue of nucleation rate by providing a predetermined areal nucleation density. 4,5 Diamond seeding has the advantage of being insensitive to deposition conditions, with growth of the nuclei beginning "immediately" upon introduction to the growth environment. Scratched substrates require an "incubation" period preceding growth that is dependent on the growth environment (substrate temperature, gas pressure, and gas composition).…”
Section: Introductionmentioning
confidence: 99%
“…Monocrystalline diamond substrates induce homoepitaxial crystalline films, whereas non-diamond and PCD substrates result in the growth of PCD films. For non-diamond substrates, a nucleation procedure is necessary to produce the diamond precursors, namely: (1) surface abrasion with diamond particles to insert them on the substrate's surface [72][73][74], (2) sonication of diamond powder loaded solution [75], (3) bias enhanced nucleation (BEN) [76][77][78],where C = ions and CHx = (x = 1, 2, 3) from a plasma, created in front of the substrate surface, are accelerated, with very low energy, towards the surface, getting implanted on the surface and inducing the seeding process, (4) spinning of diamond-powder-loaded photoresist (DPR) [79], and (5) spraying of diamond-loaded fluids [80,81] on the substrate surface. All substrate's surfaces seeding processes, described above, are applied to grown diamond films by different methods, as summarized in Table 6 [82].…”
Section: Chemical Vapor Deposition Of Pcd Filmsmentioning
confidence: 99%