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Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth Appl. Phys. Lett. 92, 133113 (2008); 10.1063/1.2838303Effect of ultrahigh nucleation density on diamond growth at different growth rates and temperatures An ultrahigh density seeding process of diamond thin-film deposition is demonstrated. Diamond powders with average grain sizes of 0.038 and 0.101 m were used to study the surface roughness as a function of deposition time, film thickness, and nucleation density. The diamond films, prepared by hot filament chemical vapor deposition, were characterized by atomic force microscopy, scanning electron microscopy, and Raman spectroscopy. An extremely high nucleation density on the order of 10 11 cm Ϫ2 was achieved by coating 0.038 m diamond powder on the surface of the Si substrate. One micron thick films were obtained with the mean surface roughness of 30 nm.

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Growth rate and quality variation of homoepitaxial diamond grown at elevated temperatures