Ultrahigh nucleation density for growth of smooth diamond films

Yang, G. S.; Aslam, M.

doi:10.1063/1.113528

Cited by 35 publications

(5 citation statements)

References 9 publications

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“…Surface abrasion, [16][17][18] ultrasonic in diamond powder loaded solution, 19 bias enhanced nucleation ͑BEN͒, 20-22 spinning of diamond-powder-loaded photoresist ͑DPR͒, 23 and spraying of diamond-loaded fluids 24,25 are typically used for the pretreatment as shown in Table II. In the present study, a new technique is developed for large area seeding with better control of uniformity and high density. Surface abrasion, [16][17][18] ultrasonic in diamond powder loaded solution, 19 bias enhanced nucleation ͑BEN͒, 20-22 spinning of diamond-powder-loaded photoresist ͑DPR͒, 23 and spraying of diamond-loaded fluids 24,25 are typically used for the pretreatment as shown in Table II. In the present study, a new technique is developed for large area seeding with better control of uniformity and high density.…”

Section: A Seedingmentioning

confidence: 99%

Technology of polycrystalline diamond thin films for microsystems applications

Tang

Aslam

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Large area and uniform polycrystalline diamond ͑poly-C͒ thin films, with a thickness of approximately 1 m, were grown and patterned on 4 in. oxidized Si wafers using IC compatible processes for microsystems applications. Uniform and reproducible seeding with a density of 2 ϫ 10 10 /cm 2 was achieved by spinning diamond powder loaded water on 4 in. wafers. Gas mixture of 1.5% methane in hydrogen was used in MPCVD system for diamond film growth with optimized pressure and microwave power. Thickness variation of less than 20% was achieved on the 4 in. area using 43 Torr pressure and 2.8 kW microwave power. Electron cyclotron resonance ͑ECR͒-assisted microwave plasma reactive ion etch was carried out using SF 6 /O 2 / Ar gases to pattern the diamond films with an etch rate around 80 nm/ min and less than 10% variation in etch rate over a 4 in. area.

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Section: A Seedingmentioning

confidence: 99%

Technology of polycrystalline diamond thin films for microsystems applications

Tang

Aslam

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The solid or powder sources were used to prepare samples in the high or low resistivity ranges, respectively. For the third set, diamond films with grain sizes in the range of 0.3 to 1.5 m and film thicknesses in the ranges of 0.5 to 2.5 m were prepared using initial nucleation densities in the ranges of 10 and 10 cm [14], respectively. Table I summarizes the deposition conditions of all the films used in this study.…”

Section: Resultsmentioning

confidence: 99%

Technology and characterization of diamond field emitter structures

Hong

Aslam

1998

IEEE Trans. Electron Devices

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In an effort to develop diamond field emitters with high current densities, diamond film technology compatible with Si integrated circuits is used to design new experiments for a systematic study of field emission as a function of sp 3 =sp 2 ratio, grain size, doping level, patterning, field enhancement at the grain tips, and anode to emitter separation. Boron-doped polycrystalline diamond films with low sp 3 =sp 2 ratios, high density of small grains and grain boundaries, and patterned structures result in high current densities and low emission fields. Electric fields to initiate emission, measured at J = 0:01 mAcm 02 , are in the range of 0.1-0.4 MV/cm depending upon diamond growth conditions. The results of this study have important consequences for diamond triode field emitter displays.

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“…Many techniques have been employed to start the initial nucleation, including scratching the substrate surface with abrasives, ultrasonic treatment of the substrate in a diamond powder slurry, bias-enhanced nucleation, carburization of substrate surface, diamond-loaded photoresist, spin-coating or spraying of diamond-loaded fluids, etc. [11][12][13][14][15][16][17][18][19][20][21]. A specially formulated nanodiamond dispersion called resorcinarene amine encapsulated microdiamant [22] was spin-coated on the wafer to achieve uniform seeding and dense distribution of nanodiamond particles over the entire wafer.…”

Section: Diamond Nucleationmentioning

confidence: 99%

Selective growth of nanodiamond films in microwave plasma

Albin

Williams

Zhou

et al. 2012

Composite Interfaces

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A patterned nanodiamond film is grown using microwave plasma-enhanced chemical vapor deposition. A selective growth method compatible with traditional silicon processing is described. A diamond pattern of high quality and moderate resolution is achieved. The process utilized is simple to generate patterns without etching diamond. A rectifying junction is demonstrated using a p-type nanodiamond and p-type silicon heterojunction with rectifying ratio of two orders of magnitude. This simple patterning technique could be applied in the fabrication of diamond electronic and mechanical devices and biological sensors. The plasma emission spectra indicate the presence of both CH and C 2 species, which are responsible for diamond growth. IntroductionAmong many methods employed for diamond film growth, chemical vapor deposition (CVD) using microwave (MW) plasma is quite popular due to several reasons. The well-confined plasma does not touch the reaction chamber walls and can be produced directly on the substrate. Hence, contamination in the grown films can be minimized unlike in hot filamentbased CVD. Indirect substrate heating is also achieved by the MW. Diamond films and coatings have found wide ranging applications in sensors [1], protective coatings [2], optical windows [3], and electronic and electrochemical devices [4]. Many such applications require patterning of diamond thin films. However, the unusual chemical inertness and hardness makes patterning of diamond quite difficult. Reactive ion etching is a common method for diamond patterning [5-8] that involves a reactive gas like SF 6 and a highly selective masking material such as gold. This process suffers from the problems of over etching and micro mask effect [9,10]. In this paper, we describe a novel method for selective growth of a nanodiamond film in a MW, which is compatible with conventional Si processing. A rectifying isotype junction is demonstrated using a p-type nanodiamond (p-NCD)/p-type silicon (p-Si) heterojunction diode with rectifying ratio of two orders of magnitude. Diamond patterns are achieved without dry etching.

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Ultrahigh nucleation density for growth of smooth diamond films

Cited by 35 publications

References 9 publications

Technology of polycrystalline diamond thin films for microsystems applications

Technology of polycrystalline diamond thin films for microsystems applications

Technology and characterization of diamond field emitter structures

Selective growth of nanodiamond films in microwave plasma

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