Technology and characterization of diamond field emitter structures

Abstract

In an effort to develop diamond field emitters with high current densities, diamond film technology compatible with Si integrated circuits is used to design new experiments for a systematic study of field emission as a function of sp 3 =sp 2 ratio, grain size, doping level, patterning, field enhancement at the grain tips, and anode to emitter separation. Boron-doped polycrystalline diamond films with low sp 3 =sp 2 ratios, high density of small grains and grain boundaries, and patterned structures result in high current densities and low emission fields. Electric fields to initiate emission, measured at J = 0:01 mAcm 02 , are in the range of 0.1-0.4 MV/cm depending upon diamond growth conditions. The results of this study have important consequences for diamond triode field emitter displays.