Effects of N/sub 2/O anneal and reoxidation on thermal oxide characteristics

Liu, Zhaowei; Wann, H.-J.; Ko, P.K.; Hu, Chenming; Cheng, Yung‐Chen

doi:10.1109/55.192772

Cited by 71 publications

(28 citation statements)

References 9 publications

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“…Otherwise, due to a large number of low-frequency traps (traps farther away from the interface). Therefore, the extracted values support that both NH nitridation and N O growth produce a nonuniform trap distribution decreasing away from the interface due to hydrogen-related species for the former [6], [7], and an inferior structural transition layer with a lot of defects near the oxide/Si interface for the latter [8]. Also based on , the former introduces more high-frequency traps than the latter due to the significant effects of the hydrogen species in NH .…”

Section: Resultssupporting

confidence: 55%

“…[1]- [4]. However, the process of nitridation also leads to increases of oxide/Si interface-state density and noise [5], especially for NHnitrided and N O-grown oxynitrides, because the former suffers from hydrogen-related electron traps [6], [7], and the latter has an inferior structural transition layer with several defects near the oxide/Si interface, resulting from an initial accelerated growth phase [8]. Recently, the interface qualities of these oxynitrides have been improved by a backsurface Ar bombardment technique [9], [10].…”

Section: Introductionmentioning

confidence: 98%

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Improvement on 1/f noise properties of nitrided n-MOSFETs by backsurface argon bombardment

Lai¹,

Cheng³

1999

IEEE Electron Device Lett.

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The 1=f noise properties of nitrided n-MOSFET's bombarded by low-energy (550 eV) argon-ion beam are investigated. It is found that after bombardment, 1=f noise, and its degradation under hot-carrier stress are reduced, and both exhibit a turnaround behavior with bombardment time for a given ion energy and intensity. The physical mechanism involved is probably enhanced interface hardness resulting from bombardment-induced stress relief in the vicinity of the oxide/Si interface. Moreover, from the frequency dependence of the noise, it is revealed that the nitrided devices have a nonuniform trap distribution increasing toward the oxide/Si interface which can be modified by the backsurface bombardment.

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Section: Resultssupporting

confidence: 55%

Section: Introductionmentioning

confidence: 98%

Improvement on 1/f noise properties of nitrided n-MOSFETs by backsurface argon bombardment

Lai¹,

Cheng³

1999

IEEE Electron Device Lett.

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“…While both techniques lead to incorporation of nitrogen at the interface, the annealing in N O leads to new oxide growth [7], as opposed to the annealing in NO which nitrides the interface with virtually no new oxide growth [8]- [11]. The nitrogen accumulation at the interface is related to observed improvements of the electrical characteristics of oxide/silicon interface [8]- [14]. Similar effects have been observed when the oxide is grown on nitrogen implanted polysilicon [15].…”

Section: Si Background Sic Results and Discussionmentioning

confidence: 78%

Nitridation of silicon-dioxide films grown on 6H silicon carbide

Dimitrijev

Harrison

et al. 1997

IEEE Electron Device Lett.

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Abstract-This letter addresses the question of why it is possible to grow high-quality oxide films on N-type but not on P-type SiC. It provides results which indicate that the oxide/SiC interface would be inferior to the oxide/Si interface for both, N-type and P-type SiC, if it were not for the beneficial effects of nitrogen incorporation. The letter presents, for the first time, results on nitridation of thermally grown oxides in NO and N2O. The results demonstrate that the oxides grown on P-type can be improved by NO annealing, but not by N2O annealing.

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“…Thermal nitridation of conventional oxides in a nitrogen rich ambient, most notably NH3 and N 2 0 , has been shown to improve many properties of the oxide films [1]- [3]. N2O nitridation, in particular, is appealing because of the absence of deleterious hydrogen which has been correlated with electron trapping and because the films requires no reoxida-…”

Section: Introductionmentioning

confidence: 99%

The effects of furnace N/sub 2/O annealing on MOSFETs

Liu¹,

Krick²,

Wann³

et al. 1992

International Technical Digest on Electron Devices Meeting

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Abstruc#-MOSFETswith 70-110A thick furnace N20-annealed gate oxides are examined at both room and liquid nitrogen temperatures. The N 2 0 anneal not only improves device performance, e.g. by increasing the high normal field mobility and current drivability, but it also suppresses degradation induced by Fowler-Nordheim and channel hot-carrier injection. Random telegraph noise measurements reveal a possible correlation between the interface properties and the mobility. OPM 95lPcmW m J W

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Effects of N/sub 2/O anneal and reoxidation on thermal oxide characteristics

Cited by 71 publications

References 9 publications

Improvement on 1/f noise properties of nitrided n-MOSFETs by backsurface argon bombardment

Improvement on 1/f noise properties of nitrided n-MOSFETs by backsurface argon bombardment

Nitridation of silicon-dioxide films grown on 6H silicon carbide

The effects of furnace N/sub 2/O annealing on MOSFETs

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