Effects of post-deposition annealing on sputtered SiO 2 /4H-SiC metal-oxide-semiconductor

Lee, Suhyeong; Kim, Young Seok; Kang, Hae-Lim; Kim, Hyun Woo; Ha, Min−Woo; Kim, Hyeong Joon

doi:10.1016/j.sse.2017.10.001

Cited by 6 publications

(3 citation statements)

References 32 publications

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“…The absolute value of the Q eff after 60 min long nitric oxide post-deposition annealing was less than that after a 30 min long treatment. The mechanisms of the nitric oxide post-deposition annealing on sputtered SiO 2 on 4H-SiC are film densification and nitrogen passivation of the defects [27].…”

Section: Resultsmentioning

confidence: 99%

Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO₂/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing

et al. 2019

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The effect of sweeping direction on the capacitance–voltage (C–V) behavior of sputtered SiO2/4H-silicon carbide (SiC) metal-oxide semiconductor capacitors was investigated. Nitric oxide post-deposition annealing was conducted for the sputtered SiO2 on 4H-SiC. The sweeping direction of the measurement changed the C–V behavior and effective oxide charge density (Qeff) because of trapped electrons at the accumulation and detrapped electrons at the depletion. The nitrogen atoms near interface between SiO2 and 4H-SiC as a result of nitric oxide post-deposition annealing shifted the flat-band voltage in the negative direction. When the C–V was measured from depletion to accumulation, the absolute value of the Qeff after 60 min long annealing, 3.465 × 1010 cm−2 was less than that of the Qeff after 30 min long annealing, −2.912 × 1011 cm−2. The mechanisms of the nitric oxide post-deposition annealing on sputtered SiO2 on 4H-SiC are film densification and nitrogen passivation of the defects.

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Section: Resultsmentioning

confidence: 99%

Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO₂/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing

et al. 2019

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“…For Sample 4#, the oxidation is obvious and high density of suboxide components formed in oxide. These suboxide components accelerate the accumulation of defect in the near interface oxide and the QBD decreased [13] .…”

Section: Tddb Measurementmentioning

confidence: 99%

The Effect on the Interface and Reliability of SiC MOS by Ar/O<sub>2</sub> Annealing

Luo

Wan

Xia

et al. 2020

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In this paper, SiC MOS capacitors were fabricated and annealed in Ar/O2 = 9:1 ambient with different temperature, and the annealing effects on the reliability and performance of SiC MOS capacitance were investigated. We found that annealing in Ar/O2 ambient is capable to improve the reliability of gate oxide. When annealing in higher temperature, defects near SiO2/SiC interface are reduced, but the gate reliability deteriorated. It is difficult to obtain the best performance and reliability under the same conditions. There is a trade-off between Dit and reliability to adjust the annealing conditions.

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“…The thermal conductivity of 4H-SiC is 3.3-4.9 W cm −1 K −1 , which is also greater than that of Si, which is 1.4-1.5 W cm −1 K −1 . Therefore, 4H-SiC is well-suited for use in power switches [8][9][10][11][12][13][14]. Recently, various research results related to the SiC power devices have been published.…”

Section: Introductionmentioning

confidence: 99%

Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications

et al. 2020

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High-power switching applications, such as thyristor valves in a high-voltage direct current converter, can use 4H-SiC. The numerical simulation of the 4H-SiC devices requires specialized models and parameters. Here, we present a numerical simulation of the 4H-SiC thyristor on an N+ substrate gate current during the turn-on process. The base-emitter current of the PNP bipolar junction transistor (BJT) flow by adjusting the gate potential. This current eventually activated a regenerative action of the thyristor. The increase of the gate current from P+ anode to N+ gate also decreased the snapback voltage and forward voltage drop (Vf). When the doping concentration of the P-drift region increased, Vf decreased due to the reduced resistance of a low P-drift doping. An increase in the P buffer doping concentration increased Vf owing to enhanced recombination at the base of the NPN BJT. There is a tradeoff between the breakdown voltage and forward characteristics. The breakdown voltage is increased with a decrease in concentration, and an increase in drift layer thickness occurs due to the extended depletion region and reduced peak electric field.

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Effects of post-deposition annealing on sputtered SiO 2 /4H-SiC metal-oxide-semiconductor

Cited by 6 publications

References 32 publications

Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO₂/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing

Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO₂/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing

The Effect on the Interface and Reliability of SiC MOS by Ar/O<sub>2</sub> Annealing

Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications

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Effects of post-deposition annealing on sputtered SiO 2 /4H-SiC metal-oxide-semiconductor

Cited by 6 publications

References 32 publications

Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO2/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing

Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO2/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing

The Effect on the Interface and Reliability of SiC MOS by Ar/O<sub>2</sub> Annealing

Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications

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Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO₂/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing

Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO₂/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing