Efficient Incorporation of Mg in Solution Grown GaN Crystals

Freitas, Jaime A.; Feigelson, Boris N.; Anderson, Travis J.

doi:10.7567/apex.6.111001

Cited by 9 publications

(1 citation statement)

References 21 publications

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“…The spectra are characterized by the near band edge (NBE) luminescence peak at 357 nm, the donoracceptor pair (DAP) at 376 nm and broad blue luminescence (BL) and yellow luminescence (YL) bands at 420 nm and 560 nm, respectively. The position of the NBE emission matches well with reported positions of donor-bound excitonic emission with similar free carrier concentrations [31], but individual O-and Si-bound exciton peaks are spectrally too close to be resolved [32]. The NBE may be attributed to mainly O-bound excitons, based on the high oxygen concentration.…”

Section: Free-carrier Concentrationsupporting

confidence: 82%

Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN

Sintonen

Kivisaari

Pimputkar

et al. 2016

Journal of Crystal Growth

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The ammonothermal method is one of the most promising candidates for large-scale bulk GaN growth due to its scalability and high crystalline quality. However, emphasis needs to be put on understanding the incorporation and effects of impurities during growth. This article discusses how impurities are incorporated in different growth zones in basic ammonothermal GaN, and how they affect the structural, electrical and optical properties of the grown crystal. The influence of growth time on the impurity incorporation is also studied. We measure the oxygen, silicon, and carbon impurity concentrations using secondary ion mass spectrometry, and measure their effect on the lattice constant by high resolution x-ray diffraction (HR-XRD). We determine the resulting free carrier concentration by spatially resolved Fourier transform infrared spectroscopy and study the optical properties by spatially resolved low-temperature photoluminescence. We find that oxygen is incorporated preferentially in different growth regions and its incorporation efficiency depends on the growth direction. The oxygen concentration varies from 6.3 × 10 20 cm −3 for growth on the {1122} planes to 2.2 × 10 19 cm −3 for growth on the (0001) planes, while silicon and carbon concentration variation is negligible. This results in a large variation in impurity concentration over a small length scale, which causes significant differences in the strain within the boule, as determined by HR-XRD on selected areas. The impurity concentration variation induces large differences in the free carrier concentration, and directly affects the photoluminescence intensity.

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Section: Free-carrier Concentrationsupporting

confidence: 82%