Electrical transport characteristics of Ni/Pd/n-GaN Schottky barrier diodes as a function of temperature

Electrical and photovoltaic characteristics of Ni/(n)Bi2S3 Schottky barrier junction

“…Similar results have been reported by other workers on metal-semiconductor contacts such as Ni/Pd/(n)GaN, Ni/(n)Gap and Au/ZnO [36][37][38]. This inconsistency may be due to the formation of an interfacial layer containing defects [39,40].…”

Annealing effects on electrical and optical properties of a-Si:H layer deposited by PECVD

“…The values of ρ 2 and ρ 3 obtained respectively from the intercepts and the slopes of the experimental data are 0.780 and À0.00186 V in 80-160 K range (distribution 1) and 0.702 and À 0.00403 in 160-300 K range (distribution 2). A similar behavior of double GD has been observed by several researchers [13][14][15][16][17][18].…”

“…Therefore, the interface states and interfacial native oxide layer at a metal-semiconductor contact play an important role in the value of the Schottky barrier height (SBH) and modify other characteristics parameters of the devices [9,11,12]. Several researchers [13][14][15][16][17][18] have carried out extensive work on temperature dependent electrical properties of metal-semiconductors contacts and explained the observed anomaly of temperature dependence of Schottky barrier height and ideality factor by invoking two sets of Gaussian voltage dependent Schottky barrier distributions.…”

Ferromagnetic Schottky Contact for GaN Based Spin Devices

“…With barrier inhomogeneity, current will be crowded in regions of lower barrier height, more so at lower temperature. Thus, increasing barrier height and more ideal Schottky behavior at higher temperature [5,6] is explained.…”