Electrically detected magnetic resonance of a-Si:H at low magnetic fields: the influence of hydrogen on the dangling bond resonance

Brandt, Martin S.; Bayerl, M. W.; Stutzmann, M.; Graeff, Carlos F. O.

doi:10.1016/s0022-3093(98)00073-8

Cited by 40 publications

(24 citation statements)

References 9 publications

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“…Microwave frequency and temperature dependencies were also predicted. However, it turned out that this model could neither explain the signal intensity of more than 10 −3 that was observed in undoped a-Si:H at R.T. 1 , and the very weak dependencies on microwave frequency 64 and temperature 16,65 . These problems were soon resolved by another model developed by Kaplan, Solomon, and Mott (KSM model) 63 .…”

Section: Models For the Description Of Spin-dependent Transition mentioning

confidence: 89%

Modulation frequency dependence of continuous-wave optically/electrically detected magnetic resonance

et al. 2012

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Continuous wave optically and electrically detected magnetic resonance spectroscopy (cwODMR/cwEDMR) allow the investigation of paramagnetic states involved in spin-dependent transitions, like recombination and transport. Although experimentally similar to conventional electron spin resonance (ESR), there exist limitations when applying models originally developed for ESR to observables (luminescence and electric current) of cwODMR and cwEDMR. Here we present closed-form solutions for the modulation frequency dependence of cwODMR and cwEDMR based on an intermediate pair recombination model and discuss ambiguities which arise when attempting to distinguish the dominant spin-dependent processes underlying experimental data. These include: 1) a large number of quantitatively different models cannot be differentiated, 2) signs of signals are determined not only by recombination, but also by other processes like dissociation, intersystem-crossing, pair generation, and even experimental parameter such as, modulation frequency, microwave power, and temperature, 3) radiative and non-radiative recombination cannot be distinguished due to the observed signs of cwODMR and cwEDMR experiments.

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Section: Models For the Description Of Spin-dependent Transition mentioning

confidence: 89%

Modulation frequency dependence of continuous-wave optically/electrically detected magnetic resonance

et al. 2012

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“…As already mentioned, the sensitivity of EDMR in Si does not depend on the Zeeman splitting, so that experiments can be performed also at very low microwave frequencies, where g-factor broadening does not occur. Indeed, using EDMR at 434 MHz, a weak distant H-hyperfine induced line broadening reaching 1 G at [H] = 10% could be observed for the first time [21].…”

Section: Spin-dependence Of Conductivity Capacitance and Noisementioning

confidence: 93%

Spin‐dependent transport in elemental and compound semiconductors and nanostructures

Brandt

Goennenwein

Graf

et al. 2004

phys. stat. sol. (c)

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The results obtained on spin-dependent processes via electrically detected magnetic resonance (EDMR), capacitance-detected magnetic resonance (CDMR) and noise-detected magnetic resonance (NDMR) in a variety of different semiconductor materials, devices and nanostructures are reviewed. Similar to optically detected magnetic resonance (ODMR), these detection methods are significantly more sensitive for the detection of paramagnetic states and defects than conventional electron spin resonance (ESR) and can be applied also to semiconductors with an indirect band gap. Using GaAs/AlGaAs-heterostructures and thin films of amorphous hydrogenated silicon (a-Si:H) as examples, the physics of spin-dependent recombination and its detection via spin-dependent photoconductivity is briefly recapitulated. EDMR on pn-diodes from GaP, GaAsP and group-III nitrides, resonant spin-spin scattering in strained Si/SiGe heterostructures, new hysteresis effects in the longitudinal magneto-transport through two-dimensional electron gases and edge-magneto plasmons in different III-V heterostructures are discussed. Various aspects of ferromagnetic III-V semiconductors are investigated, including doping of GaN with Mn, inhomogeneous magnetization of GaMnAs and control of ferromagnetism in semiconductors via hydrogen. Finally, preliminary EDMR experiments on the detection of single paramagnetic defects in MOSFETs via random telegraph noise are presented.

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“…Using single electron transistors for detection, the electron and nuclear spin state even of single low-energy-implanted phosphorus donors in Si can be measured 10 . In addition to the higher sensitivity when compared to conventional EPR, a specific feature of all SDC-based mechanisms is the weak dependence of the resonance line intensities on the strength of the external magnetic field [11][12][13] . This allows to observe EPR spectra at weak magnetic fields and a) Electronic mail: david.franke@wsi.tum.de low resonance frequencies without a loss of sensitivity 14 .…”

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confidence: 99%

Spin-dependent recombination at arsenic donors in ion-implanted silicon

Franke

Otsuka

Matsuoka

et al. 2014

Applied Physics Letters

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Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and electrically detected magnetic resonance (EDMR) monitoring the DC current through the sample. The high sensitivity of these techniques allows the observation of the magnetic resonance in particular of As in weak magnetic fields and at low resonance frequencies (40-1200 MHz), where high-fieldforbidden transitions between the magnetic substates can be observed due to the mixing of electron and nuclear spin states. Several implantation-induced defects are present in the samples studied and act as spin readout partner. We explicitly demonstrate this by electrically detected electron double resonance experiments and identify a pair recombination of close pairs formed by As donors and oxygen-vacancy centers in an excited triplet state (SL1) as the dominant spin-dependent process in As-implanted Czochralski-grown Si.In the fabrication of semiconductor devices, ion implantation is widely used to create thin layers doped with different impurities for the realization of, e.g., pn junctions or ohmic contacts. Electron paramagnetic resonance (EPR) is the characterization method for the identification of the dopants and defects created during the implantation process and the investigation of their microscopic structure 1,2 . However, conventional EPR measurements can usually only be performed on samples implanted with relatively high ion energies and ion doses to get the necessary number of defects. One possibility to enhance the sensitivity of EPR measurements is the detection of spin-dependent conductivity (SDC) in methods such as electrically detected magnetic resonance (EDMR) 3-5 or spin-dependent recombination (SDR) 6 . Indeed, using both experimental approaches, dopants and defects after low dose low energy implantation have been studied succesfully. SDR, where EPR spectra are detected by measuring the microwave reflectivity of the sample, has been applied to, e.g., the investigation of defects after implantation of hydrogen 7 and bismuth 8 . In EDMR, where samples are equipped with electrical contacts to observe SDC by monitoring the DC photoconductivity, as few as 50 phosphorus donors could be detected, implanted at an energy of 14 keV (Ref. 9). Using single electron transistors for detection, the electron and nuclear spin state even of single low-energy-implanted phosphorus donors in Si can be measured 10 . In addition to the higher sensitivity when compared to conventional EPR, a specific feature of all SDC-based mechanisms is the weak dependence of the resonance line intensities on the strength of the external magnetic field 11-13 . This allows to observe EPR spectra at weak magnetic fields and a) Electronic mail: david.franke@wsi.tum.de low resonance frequencies without a loss of sensitivity 14 . A particular benefit of this is the possibility to extend EPR experiments into a regime ...

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Electrically detected magnetic resonance of a-Si:H at low magnetic fields: the influence of hydrogen on the dangling bond resonance

Cited by 40 publications

References 9 publications

Modulation frequency dependence of continuous-wave optically/electrically detected magnetic resonance

Modulation frequency dependence of continuous-wave optically/electrically detected magnetic resonance

Spin‐dependent transport in elemental and compound semiconductors and nanostructures

Spin-dependent recombination at arsenic donors in ion-implanted silicon

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