1998
DOI: 10.1063/1.366641
|View full text |Cite
|
Sign up to set email alerts
|

Electron transport in wurtzite indium nitride

Abstract: We present the velocity-field characteristics of wurtzite indium nitride, determined using an ensemble Monte Carlo approach. It is found that indium nitride exhibits an extremely high peak drift velocity at room temperature, 4.3×107 cm/s, at a doping concentration of 1.0×1017 cm−3. We also demonstrate that the saturation drift velocity of indium nitride, 2.5×107 cm/s, is comparable to that of gallium nitride, and much larger than that of gallium arsenide. Our results suggest that the transport characteristics … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

2
125
1

Year Published

2001
2001
2024
2024

Publication Types

Select...
6
2
1

Relationship

0
9

Authors

Journals

citations
Cited by 291 publications
(128 citation statements)
references
References 20 publications
2
125
1
Order By: Relevance
“…[1][2][3][4][5] Due to high drift velocity at room temperature; InN is a suitable candidate for field effect transistor. 6 InN has been explored as a solar cell material with high efficiency. 7 It has the possibility of band gap tuning in InAlGaN covering the range of 0.7-6 eV for various optoelectronic applications including radiation damage resistant solar cell applications.…”
mentioning
confidence: 99%
“…[1][2][3][4][5] Due to high drift velocity at room temperature; InN is a suitable candidate for field effect transistor. 6 InN has been explored as a solar cell material with high efficiency. 7 It has the possibility of band gap tuning in InAlGaN covering the range of 0.7-6 eV for various optoelectronic applications including radiation damage resistant solar cell applications.…”
mentioning
confidence: 99%
“…In addition, InN has a very small electron effective mass and a high electron drift velocity (O'Leary et al, 1998). Recent theoretical calculations predict an ultimate room temperature electron mobility for InN to reach 14,000 cm 2 /Vs.…”
Section: Inn Growth Condition Optimizationmentioning
confidence: 99%
“…Among semiconductor nitrides with a hexagonal crystal lattice (wurtzite modification), InN possesses the maximum drift velocity of electrons and the minimum threshold value of the electric field [1][2][3]8]. InN concedes to GaN and AlN as to inertial properties of IET and the probability of IET overlap by impact ionization.…”
Section: Setting the Problem And Parametersmentioning
confidence: 99%
“…Transport properties of these compounds have been extensively studied by numerical simulation methods, e.g. in papers [1][2][3][4]. Good inertial properties and high drift velocities of charge carriers are mentioned in all publications.…”
Section: Introductionmentioning
confidence: 99%