Electronic and optical properties of zincblende AlN, GaN and InN compounds under pressure

Berrah, Smail; Boukortt, A.; Abid, Hamza

doi:10.1088/0031-8949/75/4/006

Cited by 18 publications

(7 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The value of B ′ is underestimated by less than 7.2%. However, our calculated structural parameters for B1 phase are well consistent with other theoretical works 5–7. The calculated structure parameters of B3 phase are also in good agreement with experimental and theoretical reports 7, 22–24. There is almost no discrepancy between the calculated and experimental values for a , and for B is about 6.36%.…”

Section: Resultssupporting

confidence: 91%

See 1 more Smart Citation

High-pressure structural and electronic properties of InN

Feng

Cui

et al. 2010

Phys. Status Solidi (b)

View full text Add to dashboard Cite

We theoretically study the electronic properties and pressureinduced solid-solid phase transformation of InN by using the first-principles pseudopotential method. The wurtzite (B4), rocksalt (B1), zinc-blende (B3), CsCl-type (B2), and Cmcm crystal structures of InN have been considered. The calculations indicate that the phase transitions from B4 phase to B1 phase and B3 structure to B1 structure occur at a transition pressure of 10.2 and 9.6 GPa, respectively. The detailed volume changes during the phase transformations were analyzed. Moreover, the analysis of the band structure indicates that the bandgap of B4 phase is direct, while B1 phase is indirect under high-pressure. The mechanism of these changes of band structures was analyzed. The positive pressure derivative of the indirect and direct gap indicates that it is impossible to make B1 phase of InN metallic up to 200 GPa.

show abstract

Section: Resultssupporting

confidence: 91%

“…The calculated structure parameters of B3 phase are also in good agreement with experimental and theoretical reports 7, 22–24. There is almost no discrepancy between the calculated and experimental values for a , and for B is about 6.36%.…”

Section: Resultssupporting

confidence: 86%

High-pressure structural and electronic properties of InN

Feng

Cui

et al. 2010

Phys. Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…This can be explained by the diminishing of the dipole matrix element, the bandgap energy and the relative dielectric constant according to temperature. This behavior shows that the decrease of the threshold energy ( ) E , s which enhances normally the PICS amplitude according to equation (17), is masked by bandgap energy, dielectric permittivity and electric dipole matrix element impacts.…”

Section: Resultsmentioning

confidence: 89%

A theoretical study of the effects of electric field, hydrostatic pressure, and temperature on photoionization cross-section of a donor impurity in (Al, Ga)N/AlN double triangular quantum wells

et al. 2023

View full text Add to dashboard Cite

The aim of this research is to analyze the influence of various factors on the photo-ionization cross-section in (Al,Ga)N/AlN double triangular quantum wells. Using the finite difference method, the effects of the electric field, hydrostatic pressure, temperature, and Ga concentration were investigated within the effective mass and parabolic approximations. Our findings show that the photo-ionization cross-section (PICS) is highly dependent on all the variables under consideration. The optical spectra were blue-shifted with increasing electric field and pressure and red-shifted with increasing temperature and impurity displacement far from the center of the structure. Furthermore, it was found that changes in gallium content and impurity position can increase the PICS amplitude. A comparison of the obtained results with the existing literature as a limiting case of the reported problem is also provided, and excellent agreement is found.

show abstract

“…The set of phonons includes conventional LO phonon modes as well as LA modes. The parameters of zb-GaN crystals collected from the selection of sources [12][13][14][15][16][17][18][19] are listed in table 1.…”

Section: Materials Parameters and Modelmentioning

confidence: 99%

Monte Carlo simulation of non-equilibrium phonon accumulation in cubic GaN crystal

Raguotis¹,

Bumelienė²

2014

Phys. Scr.

View full text Add to dashboard Cite

The novel one-particle Monte Carlo procedure for the simulation of the longitudinal optical phonon distribution accumulation generated by electrons in a high electric field is presented in detail. The phonon and electron distributions are obtained employing novel code in zinc-blend n-type GaN crystals. The main quality of this code is the avoidance of the short-time-step procedure appropriate to the conventional ensemble Monte Carlo method. The maximum value of the phonon distribution function dramatically exceeds the thermal-equilibrium one. The influence of the phonon accumulation on the electron kinetic characteristics of zinc-blend GaN and other features, such as longitudinal optical phonon number inversion with respect to acoustic phonon modes, are discussed.

show abstract

Electronic and optical properties of zincblende AlN, GaN and InN compounds under pressure

Abstract: In this study, we have applied the full potential linearized-augmented plane waves (FP-LAPW) to study the effect of pressure on the electronic and optical properties of cubic GaN, AlN and InN compounds.

Cited by 18 publications

References 38 publications

High-pressure structural and electronic properties of InN

High-pressure structural and electronic properties of InN

A theoretical study of the effects of electric field, hydrostatic pressure, and temperature on photoionization cross-section of a donor impurity in (Al, Ga)N/AlN double triangular quantum wells

Monte Carlo simulation of non-equilibrium phonon accumulation in cubic GaN crystal

Contact Info

Product

Resources

About