Epitaxial growth of β-SiC single crystals by successive two-step CVD

Suzuki, Akira; Furukawa, Katsuki; Higashigaki, Yoshiyuki; Harada, Shigeki; Nakajima, Shin; Inoguchi, Toshio

doi:10.1016/0022-0248(84)90275-6

Cited by 68 publications

(9 citation statements)

References 5 publications

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“…It is interesting to note that chlorosilanes (SiCl 4 , SiHCl 3 , , and SiH 2 Cl 2 ) were to a great extent used for heteroepitaxial growth of SiC on Si (especially in the 1980s) by several groups. Their usage was limited and soon abandoned when high purity silane became commercially available at a low price.…”

Section: Chloride-based Growth Of Silicon Carbide Epitaxial Layersmentioning

confidence: 99%

Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

et al. 2011

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Section: Chloride-based Growth Of Silicon Carbide Epitaxial Layersmentioning

confidence: 99%

Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

et al. 2011

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“…[1][2][3][4][5] However, in the case of using gas sources such as SiH 4 or Si 2 H 6 for the Si source and CH 4 or C 2 H 4 for the C source, the deposition temperature is higher than 1200°C. In addition, these gases are very toxic and flammable.…”

Section: Wook Bahng and Hyeong Joon Kim A)mentioning

confidence: 99%

Heteroepitaxial growth of β-SiC thin films on Si(100) substrate using bis-trimethylsilylmethane

Bahng

Kim

1996

Applied Physics Letters

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“…The previously reported works on the growth mechanism of SiC thin films on Si substrate proposed that the void formation at SiC/Si interface is attributed to the out-diffusion of silicon atoms along ͓111͔ planes and is greatly dependent on precursor concentration, growth pressure, temperature, and time. 20,21 They also suggested that this rough SiC/Si interface causes the formation of microholes at the SiC film surface. However, when the SiC films grew on Si surfaces nitrided for 30, 60, and 90 min, smooth and planar surfaces were observed from the SiC films without the generation of triangular etch pits.…”

Section: Resultsmentioning

confidence: 99%

Growth and Characterization of SiC/SiN[sub x]/Si Structures

Nahm¹,

Kim²,

Lim

2001

J. Electrochem. Soc.

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Silicon carbide ͑SiC͒ films were grown on SiN x /Si structures. The SiN x layers were fabricated on Si surface with different thickness by either the nitridation of Si͑111͒ surface with NH 3 or the deposition of thick SiN x films by rf magnetron sputtering technique. The grown films were a single-crystalline 3C-SiC͑111͒ which follows the crystal orientation of Si substrate. The thickness of SiC films grown on SiN x /Si substrates decreased with the increase of the nitridation time as well as the SiN x thickness. The formation of voids was significantly suppressed from SiC/Si interface by the nitridation of Si surface. It was observed that SiC films grown on 100, 300, and 500 nm thick SiN x /Si substrates consisted of columnar grains of SiC crystal. This work suggests that the fabrication of SiC devices can be realized in the SiC/SiN x /Si structure.

show abstract

Epitaxial growth of β-SiC single crystals by successive two-step CVD

Cited by 68 publications

References 5 publications

Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

Heteroepitaxial growth of β-SiC thin films on Si(100) substrate using bis-trimethylsilylmethane

Growth and Characterization of SiC/SiN[sub x]/Si Structures

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