Erratum: “Angle-resolved phototelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals” [J. Appl. Phys. 104, 114112 (2008)]

Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species

“…Figure 2(b), in which the spectra having chemical shifts (CSs) of 2.67, 2.28, 1.83, 1.35, 0.97, 0.55, 0.27, and À0:25 eV (hereafter referred to as intermediate spectra) with respect to the binding energy (BE) of the Si 2p 3=2 spectrum arising from Si 0 , whose binding energy is equal to that of bulk Si, are resolved, is obtained by subtracting the Si 2p 3=2 spectrum measured at the external TOA of 15 from the Si 2p 3=2 spectrum measured at the external TOA of 85 , to eliminate the spectrum arising from SiO 2 (Si 4þ ) after multiplying the spectrum measured at the external TOA of 15 by an appropriate factor a. 22,23) Figure 2(c), in which the Si 2p 3=2 spectra having CSs of 2.67, 2.28, 1.83, 1.35, 0.97, 0.55, 0.27, and À0:25 eV are resolved, is obtained by subtracting the Si 2p 3=2 spectrum measured at the external TOA of 85 from the Si 2p 3=2 spectrum measured at the external TOA of 15 , to eliminate the spectrum arising from Si 0 after multiplying the spectrum measured at the external TOA of 85 by an appropriate factor b. 22,23) The intensity of the Si 2p 3=2 spectrum arising from Si 0 in Fig.…”

“…22,23) Figure 2(c), in which the Si 2p 3=2 spectra having CSs of 2.67, 2.28, 1.83, 1.35, 0.97, 0.55, 0.27, and À0:25 eV are resolved, is obtained by subtracting the Si 2p 3=2 spectrum measured at the external TOA of 85 from the Si 2p 3=2 spectrum measured at the external TOA of 15 , to eliminate the spectrum arising from Si 0 after multiplying the spectrum measured at the external TOA of 85 by an appropriate factor b. 22,23) The intensity of the Si 2p 3=2 spectrum arising from Si 0 in Fig. 2(a) must be affected by photoelectron diffraction (PD).…”

Pr3Si6N11/Si3N4 Stacked High-k Gate Dielectrics with High Quality Ultrathin Si3N4 Interfacial Layers

“…High-k gate dielectrics with a low leakage current are highly anticipated for advanced ultra large scale integrations (ULSIs) [1]. In our previous study [2,3], we found that high quality ultrathin Si 3 N 4 film formed using nitrogen-hydrogen (NH) radicals is attractive as a high-k gate dielectric owing to its high relative dielectric constant (7.5), sufficiently low interface state density and low leakage current density (1A/cm2@1V) for application in CMOS devices, and as a Si-based dielectric. On the other hand, numerous studies of Hf oxide and lanthanide-based metal oxide/silicate high-k gate dielectric have been carried out in order to improve the performance of the CMOS devices.…”

Clear Difference between the Chemical Structure of SiO2/Si Interface Formed Using Oxygen Radicals and that Formed Using Oxygen Molecules

“…Figure 1 shows the spectra arising from the interface structures formed utilizing OR and that utilizing OM obtained by taking difference between two Si 2p 3/2 spectra measured at photoelectron take-off angles (TOAs) of 15° and 85° to eliminate spectra arising from bulk Si. 8,9 The Si 2p 3/2 spectrum thus obtained was decomposed into those arising from intermediate states (IMS) consisting of Si-Si-O 3 (Si 3+ ), Si 2 -Si-O 2 (Si 2+ ), Si 3 -Si-O (Si 1+ ), α-Si, β-Si, and γ-Si. Here, α-Si is affected by its second nearest neighbor O atoms, 10 and most of γ-Si formed utilizing OR is affected by removing H atoms before oxidation.…”