Etching profile of silicon carbide in a NF3/CH4 inductively coupled plasma

Kim, Byungwhan; Lee, Suk Yong; Lee, Byung‐Teak

doi:10.1016/j.mee.2004.02.095

Cited by 5 publications

(3 citation statements)

References 15 publications

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Section: Etching Of Sic With Different Plasmasmentioning

confidence: 99%

“…Due to the appropriate selection of the process parameters, including energy of the bombarding ion beam, it is possible to control the slope of side walls of the etched profiles [ 5 , 55 ]. Kim et al [ 55 ] investigated the ICP-RIE process of SiC structures with a nickel mask etched in the NF 3 + CH 4 plasma. They determined the influence of the source power (acceleration of reactive ions), the so-called RF bias power, on U DC and the angle of side walls inclination (the so-called profile angle) of the etched profiles.…”

Section: Etching Of Sic With Different Plasmasmentioning

confidence: 99%

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A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

et al. 2021

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The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O2 addition to the SF6 plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport.

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Section: Etching Of Sic With Different Plasmasmentioning

confidence: 99%

Section: Etching Of Sic With Different Plasmasmentioning

confidence: 99%

A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

et al. 2021

View full text Add to dashboard Cite

show abstract

“…For example, the trench metal-oxide semiconductor field effect transistor (trench-MOSFET) is a promising candidate. However, the etching damages [2] and sub-trench easily occur in the plasma etching process [3,4]. The sub-trenches were usually removed by high-temperature annealing in hydrogen, or optimization of the plasma etching process [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%