EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing

Chan, Y. David; Rastegar, Abbas; Yun, Henry; Putna, E. Steve; Wurm, Stefan

doi:10.1117/12.847371

Cited by 6 publications

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Note that to remove defects requires a precise defect map from the defect inspection tools. But, according to [7], there are still many problems with the defect location detection with 10-30 nm inaccuracy, and the inspection throughput is still far from the requirement. During the defect removal process, damage to the ML structure might also happen [4].…”

Section: Introductionmentioning

confidence: 98%

Layout small-angle rotation and shift for EUV defect mitigation

Wong

Deng

et al. 2012

Proceedings of the International Conference on Computer-Aided Design

View full text Add to dashboard Cite

Blank defect mitigation is crucial for extreme ultraviolet (EUV) lithography. One of the existing options is to relocate patterns to avoid defect impact. However, when the defect number increases, only pattern shift in X-Y directions becomes far from enough, requiring the reticle holder rotate a small angle to provide a third exploring dimension. This non-trivial extension from 2D to 3D exploration requests efficient runtime as well as enough accuracy to handle different defect sizes and locations on the different features. In this paper, we present the first work with a detailed algorithm to find the optimal shift and rotation for layout patterns on blanks. Compared to the straightforward method, which is to check every pair of defect and feature at every possible relocation position, our proposed algorithm can significantly reduce the runtime complexity to scale linearly with the size of the full solution space. The experimental results validate our method and show a largely increased success rate of defect mitigation by shift and rotation.

show abstract

Section: Introductionmentioning

confidence: 98%

Layout small-angle rotation and shift for EUV defect mitigation

Wong

Deng

et al. 2012

Proceedings of the International Conference on Computer-Aided Design

View full text Add to dashboard Cite

show abstract

“…Therefore, the required brightness for actinic patterned mask inspection is higher. For example, according to a paper from Sematech and Intel [6], one inspection tool supplier estimated the required source brightness to be ~2,500 W/mm 2 ⋅sr. In addition, an important aspect of any tool or method in the semiconductor industry is the extendibility to the future technology nodes.…”

Section: Introductionmentioning

confidence: 99%

A high-brightness accelerator-based EUV source for metrology applications

Ekinci

Garvey

Streun

et al. 2018

Photomask Technology 2018

View full text Add to dashboard Cite

One of the challenges of actinic metrology tools for EUV lithography is the availability of light sources with high brightness, stability, and availability. In particular, actinic patterned mask inspection on EUV reticles is considered an essential tool for the EUV lithography ecosystem and it requires an EUV source of high brightness. We present the design of a compact and accelerator-based light source producing EUV radiation with high-brightness for actinic metrology applications in the semiconductor industry. Our design is based on the well-established components and design principles. The specifications required for actinic mask inspection is achieved using a short period undulator and 430 MeV electron energy. The concentric design of storage and booster rings enables stable operation with a relatively small footprint. This study shows the commercial viability of a compact and high-brightness EUV source with high stability and reliability and demonstrates its feasibility for actinic metrology applications.

show abstract

“…UV laser inspection and imaging is therefore critical to identify defects in the fabrication process to maximize yield and reduce cost in this highly competitive industry. 5 UV imaging has also recently been used in medical imaging to study how caffeine affects calcium ionic pathways in the brain. 6 Rockets produce significant UV emission due to the production of excited nitrogen oxide species in their plumes.…”

Section: Introductionmentioning

confidence: 99%

Atomically precise surface engineering of silicon CCDs for enhanced UV quantum efficiency

Greer

Hamden

Jacquot

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

The authors report here on a new technique, combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate back illuminated silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155-300 nm). This report describes in detail the unique surface engineering approaches used and demonstrates the robustness of detector performance that is obtained by achieving atomic level precision at key steps in the fabrication process. The characterization, materials, and devices produced in this effort will be presented along with comparison to other approaches.

show abstract

EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing

Cited by 6 publications

References 0 publications

Layout small-angle rotation and shift for EUV defect mitigation

Layout small-angle rotation and shift for EUV defect mitigation

A high-brightness accelerator-based EUV source for metrology applications

Atomically precise surface engineering of silicon CCDs for enhanced UV quantum efficiency

Contact Info

Product

Resources

About