Experimental Demonstration of 3.3kV Planar CIGBT In NPT Technology

Sweet, M.; Luther-King, N.; Kong, S.T.; Narayanan, E.M. Sankara; Bruce, J.; Ray, Shona

doi:10.1109/ispsd.2008.4538894

Cited by 17 publications

(4 citation statements)

References 6 publications

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“…The device is fabricated on a 500 µm thick wafer with a doping profile shown in Figure 3b. A new proposed structure is inspired by the clustered IGBT (CIGBT) concept, schematically illustrated in Figure 4, which is promoted in reducing conduction losses with a simple application of two additional deep diffusions [8][9][10][11]. Regarding these additional layers there are four optimization parameters: doping concentration and thickness of the two new layers.…”

Section: Sscb Bespoke Optimizationmentioning

confidence: 99%

Overload robust IGBT design for SSCB application

Supono

Urresti

Castellazzi

et al. 2014

Microelectronics Reliability

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This paper presents an optimised power semiconductor architecture based on the CIGBT approach to be used in solid-state circuit breaker (SSCB) applications where the conduction losses have to be as low as possible without compromising the forward voltage blocking capability. Indeed, a high overcurrent turn-off and shortcircuit withstand capabilities have to be ensured. Starting from a standard NPT-IGBT design for switching applications, the results show that the proposed device, which is optimised by the application of the individual clustered concept, offers a reduction in conduction losses of 13%, without compromise on voltage blocking capability. An original design solution is implemented to further ensure short-circuit and overload turn-off capabilities at maximum ambient temperature and twice the nominal rated current.

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Section: Sscb Bespoke Optimizationmentioning

confidence: 99%

Overload robust IGBT design for SSCB application

Supono

Urresti

Castellazzi

et al. 2014

Microelectronics Reliability

View full text Add to dashboard Cite

show abstract

“…On the other hand, the short circuit capability of standard and dual EST structures is limited to very-low voltages in relation to the low-voltage MOSFET within the structure. However, a cascaded type EST [55] is capable of providing the short circuit capability www.ietdl.org but at the expense of lowering the plasma concentration with higher on-state losses due to a lower doped n-region in the integrated thyristor structure.…”

Section: Revisiting Mos Bipolar Device Conceptsmentioning

confidence: 99%

Future trends in high‐power bipolar metal‐oxide semi‐conductor controlled power semi‐conductors

Rahimo¹

2014

IET Circuits, Devices & Systems

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Silicon-based high-power devices continue to play an enabling role in modern high-power systems, especially in the fields of traction, industrial and grid applications. Today, approximately 30 years after its invention, a bipolar-metal-oxide semiconductor controlled switch referred to as the insulated gate bipolar transistor (IGBT) is the device of choice for the majority of power electronics converters with power ratings ranging from few kWs to beyond the 1 GW mark. Following a brief introduction into power devices and applications in general, this paper will provide an overview of the development history and recent advancements of the IGBT. More importantly the future technology trends purely from the device design view point will be discussed including the predicted performance impact such technology platforms will have at the system level especially in the high-power range.

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“…In this paper, we demonstrate the dynamic avalanche ruggedness of 3.3kV Field-Stop Clustered IGBT (CIGBT) [7][8][9][10] with self-voltage clamping capability. The technology shows improved safe and efficient operation and will ease the design constrictions on the system level.…”

Section: Introductionmentioning

confidence: 99%

Enhanced dynamic voltage clamping capability of Clustered IGBT at turn-off period

2016

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One of the critical requirements for high power devices is to have rugged and reliable capability against hash operating conditions. In this paper, we present the dynamic voltage clamping capability of 3.3kV Field Stop Clustered IGBT devices under extreme inductive load condition. It shows that PMOS trench gate CIGBT structure with outstanding performance of fast turn-off time and low over-shoot voltage. Further optimization of current gain of CIGBT structure is analyzed through numerical evaluation. A step further in the safe operating area has been achieved for high voltage devices by CIGBT technology.

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Experimental Demonstration of 3.3kV Planar CIGBT In NPT Technology

Cited by 17 publications

References 6 publications

Overload robust IGBT design for SSCB application

Overload robust IGBT design for SSCB application

Future trends in high‐power bipolar metal‐oxide semi‐conductor controlled power semi‐conductors

Enhanced dynamic voltage clamping capability of Clustered IGBT at turn-off period

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