Extreme environment temperature sensor based on silicon carbide Schottky Diode

Josan, Ioana; Boianceanu, C.; Brezeanu, Gheorghe; Obreja, V.V.N.; Avram, Mărioara; Puscasu, D.; Ioncea, A.

doi:10.1109/smicnd.2009.5336658

Cited by 19 publications

(5 citation statements)

References 2 publications

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“…The sensor demonstrated stable operation in a temperature range from 20 C up to 600 C. In fact, the highest temperature is not limited by the device itself but by the measurement equipment. The device with an active area of 2.25 Â 10 À4 cm 2 achieves a sensitivity of 3.5 mV/ C, which is higher than the reported sensitivities of SiC Schottky diode 12 and SiC JFET 5 temperature sensors.…”

mentioning

confidence: 66%

“…Moreover, high breakdown field (3-5 MV/cm), high-saturated electron velocity (2 Â 10 7 cm/s) and high thermal conductivity (3-5 W/cm C) enable SiC devices to work under extreme conditions. 9,10 SiC Schottky diodes have been previously demonstrated as viable temperature sensors that can work up to 400 C. [11][12][13] However, SiC Schottky diode suffers from reliability issues of the Schottky contact as well as high leakage current at elevated temperatures. Fortunately, SiC pn junction is very stable and theoretically permits device operation at junction temperatures exceeding 800 C. 14 Hence, SiC pn diode can be a suitable alternative for operation at elevated temperatures.…”

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confidence: 99%

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Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C

Zhang¹,

Lin²,

Senesky³

et al. 2014

Applied Physics Letters

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confidence: 66%

mentioning

confidence: 99%

Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C

Zhang¹,

Lin²,

Senesky³

et al. 2014

Applied Physics Letters

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“…2. Although the specific setup and packaging adopted do not allow a reliable characterization above 300°C, it is expected that the sensor can be operated at much higher temperatures [6], [7]. It is worth noting that curves cross the same I -V point, a typical behaviour for Schottky diodes [12].…”

Section: Resultsmentioning

confidence: 99%

High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes

Rao

Pangallo

Pezzimenti

et al. 2015

IEEE Electron Device Lett.

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A high-performance temperature sensor based on coupled 4H-SiC Schottky diodes is presented. The linear dependence on temperature of the difference between the forward voltages appearing on two diodes biased at different constant currents, in a range from 30°C up to 300°C, was used for temperature sensing. A high sensitivity of 5.11 mV/°C was measured. This is, to the best of our knowledge, the first experimental result about a proportional-to-absolute-temperature sensor made with SiC diodes, showing both a good degree of linearity and long-term stability performance.Index Terms-Schottky diodes, silicon carbide, temperature sensors, wide band gap semiconductors.

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“…9,10,19 In our fabricated device, current range was varied from 1 nA to 5 pA. Many researchers have fabricated 4H-nSiC Schottky diode for harsh environment temperature measurement, but they have calculated the thermal sensitivity in current range up to nanoampere (i.e., from lA to nA).…”

Section: Resultsmentioning

confidence: 99%

Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor

Kumar

Maan

Akhtar

2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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This paper presents the thermal sensitivity variation trend of Ni/4H-nSiC (0001) Schottky diode based temperature sensor, equipped with floating metal guard ring and oxide field plate as edge terminations in low current regime, i.e., ranging from 1 nA to 5 pA. Various measurements were carried out at temperatures ranging from 233 K to 473 K in steps of 20 K. An imperative outcome of the present study, which is in contrast with the theory, is that there exists an anomaly in the device thermal sensitivity behaviour after a range of current. The thermal sensitivity of the fabricated device, calculated from the slope of forward voltage versus temperature plot, was found to be varied from 3.11 mV/K at 1 nA to 3.32 mV/K at 5 pA with standard error of 60.03 mV/K. A detailed analysis of I-V-T characteristics by taking into account all the possibilities for variation in the barrier height and the ideality factor with temperature emphasizes that there exist barrier height inhomogeneities at the metal-semiconductor interface in the fabricated device. These observations indicate that anomaly in the device thermal sensitivity was due to the barrier height inhomogeneities present in the device.

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Extreme environment temperature sensor based on silicon carbide Schottky Diode

Cited by 19 publications

References 2 publications

Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C

Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C

High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes

Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor

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