Fabrication and Analysis of High-Performance Integrated Solenoid Inductor With Magnetic Core

Lee, Dok Won; Hwang, Kyung Hoon; Wang, S.X.

doi:10.1109/tmag.2008.2003398

Cited by 119 publications

(8 citation statements)

References 17 publications

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“…The inductance of L1 for the proposed device is thus 1.375 μH. Refer to [15], a 20 μH/cm 2 is achieved, and the area cost by the inductor L1 is approximately 0.069 cm 2 , which leads a small increase in R on,sp from 15.8 m • cm 2 to 21.3 m • cm 2 . Fig.…”

Section: Figure 7 Comparison Of R Onsp Versus Bv Between the Previous P-ldmos And The Proposed P-ldmos Reference [13] Is A Simulation Stumentioning

confidence: 90%

“…The laser recrystallized polysilicon exhibits an improved static performance that is almost as good as the single-crystal silicon. The other difference is to fabricate the integrated inductor L1, which complicates the process [15], [19]. For example, in [15], processes such as electroplating copper on the oxide, spin-coating and hardcuring polyimide PI-2611, sputter-deposition and wet-etch of amorphous CoTaZr film (the magnetic core), which are not standard CMOS processing steps, are required.…”

Section: Figure 7 Comparison Of R Onsp Versus Bv Between the Previous P-ldmos And The Proposed P-ldmos Reference [13] Is A Simulation Stumentioning

confidence: 99%

“…The other difference is to fabricate the integrated inductor L1, which complicates the process [15], [19]. For example, in [15], processes such as electroplating copper on the oxide, spin-coating and hardcuring polyimide PI-2611, sputter-deposition and wet-etch of amorphous CoTaZr film (the magnetic core), which are not standard CMOS processing steps, are required. However, as an alternative option for this work, it is also possible to package a discrete inductor and other components together for achieving this functionality.…”

Section: Figure 7 Comparison Of R Onsp Versus Bv Between the Previous P-ldmos And The Proposed P-ldmos Reference [13] Is A Simulation Stumentioning

confidence: 99%

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A Novel p-LDMOS Additionally Conducting Electrons by Control ICs

Guo

Chen

2019

IEEE J. Electron Devices Soc.

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A silicon-on-insulator (SOI) p-channel lateral double-diffused MOSFET (p-LDMOS), conducting not only holes but also electrons, is proposed and investigated by TCAD simulations. Its most important advantage is the greatly improved relationship between the breakdown voltage (BV) and the specific on-resistance (R on,sp ). The improvement is mainly attributed to two aspects. First, many holes can accumulate in the p-drift region in the on-state, which provides a low-resistance path for hole conduction. Second, a paralleled n-LDMOS is, meanwhile, automatically triggered to form a new path for electrons. Electrons have higher mobility than holes; thus, the device performance is further improved. Based on a simulation comparison with the previous p-LDMOS at the same BV of 300 V, the R on,sp of the proposed p-LDMOS decreased by 78% and the figure of merit (FOM) increased approximately 3.4 times. Moreover, the proposed device still has the conventional three-terminal style, and its fabrication process is compatible with CMOS technology.INDEX TERMS High-side switch, power MOSFET, silicon-on-insulator.

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Section: Figure 7 Comparison Of R Onsp Versus Bv Between the Previous P-ldmos And The Proposed P-ldmos Reference [13] Is A Simulation Stumentioning

confidence: 90%

Section: Figure 7 Comparison Of R Onsp Versus Bv Between the Previous P-ldmos And The Proposed P-ldmos Reference [13] Is A Simulation Stumentioning

confidence: 99%

Section: Figure 7 Comparison Of R Onsp Versus Bv Between the Previous P-ldmos And The Proposed P-ldmos Reference [13] Is A Simulation Stumentioning

confidence: 99%

See 1 more Smart Citation

A Novel p-LDMOS Additionally Conducting Electrons by Control ICs

Guo

Chen

2019

IEEE J. Electron Devices Soc.

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“…Another factor favoring the use of two magnetic layers is that many of the materials are anisotropic, and it is necessary to keep the direction of magnetic flux parallel to one axis. In toroidal designs (using only one magnetic deposition step) the direction of flux must be perpendicular to this favored direction in some regions [48], [49]. In [50], special fabrication approaches are used to make a magnetic materials that work well in this configuration.…”

Section: B Inductor Designs With Thin-film Magnetic Coresmentioning

confidence: 99%

Integrating magnetics for on-chip power: Challenges and opportunities

Sullivan

2009

2009 IEEE Custom Integrated Circuits Conference

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Integration of efficient power converters requires a technology for efficient, high-power on-chip inductors. The state of the art is reviewed, and possible future developments are discussed for both air-core and magnetic-core inductors. Performance limits and scaling are analyzed. General design possibilities are outlined and different approaches are compared. Magnetic materials are reviewed, and nano-granular composite materials are highlighted as an attractive option. IEEE 2009 Custom Intergrated Circuits Conference (CICC) 978-1-4244-4072-6/09/$25.00

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“…To improve the coil inductance per area, some researchers have reported solenoid MEMS microcoils without cores [15]- [18]. Some studies [19]- [21] reported the integration of magnetic cores in MEMS microcoils and verified that iron-core solenoid coils had a considerably higher inductance density than air-core solenoid coils. For micromotors, solenoid iron-core microcoils not only provide a higher inductance density, but also help establish a low-resistance magnetic circuit.…”

Section: Introductionmentioning

confidence: 99%

A Radial-flux Permanent Magnet Micromotor with 3D Solenoid Iron-core MEMS In-chip Coils of High Aspect Ratio

Tao

Sun

et al. 2020

IEEE Electron Device Lett.

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Because of the difficulty in fabricating iron-core solenoid coils by micro electro-mechanical system (MEMS) processes, existing micromotors typically have an axial-flux structure with planar spiral coils or air-core solenoid coils. However, solenoid iron-core microcoils have a higher inductance and a lower magnetic resistivity than spiral coils and air-core solenoid coils. In this study, a radialflux permanent magnet (PM) micromotor with 3D iron-core MEMS in-chip coils of high aspect ratio was designed and fabricated. The three-phase PM brushless direct current (BLDC) micromotor has four Nd-Fe-B magnet poles on a steel rotor and six solenoid Cu coils of high aspect ratio (coil height/line width = 14) in the silicon stator fabricated using MEMS processes. Iron cores were inserted into the coils, and a low-resistivity magnetic circuit was established. At 100 Hz, the inductance of a 15-turn coil was 13.2µH. The coils were embedded tightly in the silicon substrate, resulting in a good heat dissipation performance and thus a high current-carrying capacity. The hexagonal sheet-type micromotor weighed 2.25 g with a volume of 586.5 mm 3 before bearing packaging. The modeling results showed that at 10000 rpm, the torque was 676µN•m and the power density was 314 W/kg. This micromotor incorporates a conventional large-scale BLDC motor structure and the proposed design will help improve the power density and efficiency of micromotors, thereby broadening their application prospects. Index Terms-Iron-core microcoils, micromotors, permanent magnet motors, power MEMS.

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Fabrication and Analysis of High-Performance Integrated Solenoid Inductor With Magnetic Core

Cited by 119 publications

References 17 publications

A Novel p-LDMOS Additionally Conducting Electrons by Control ICs

A Novel p-LDMOS Additionally Conducting Electrons by Control ICs

Integrating magnetics for on-chip power: Challenges and opportunities

A Radial-flux Permanent Magnet Micromotor with 3D Solenoid Iron-core MEMS In-chip Coils of High Aspect Ratio

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