Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition

Kato, Hiromitsu; Nango, T.; Miyagawa, Takeshi; Katagiri, Takeshi; Ohki, Yoshimichi; Seol, Kwang Soo; Takiyama, Makoto

doi:10.1109/iseim.2001.973708

Proceedings of 2001 International Symposium on Electrical Insulating Materials (ISEIM 2001). 2001 Asian Conference on Electrica

DOI: 10.1109/iseim.2001.973708

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Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition

Hiromitsu Kato

T. Nango²,

Takeshi Miyagawa³

et al.

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“…1 High-k materials have been reported to reduce the gate leakage current and to boost scale-down devices. [2][3][4][5] Cerium dioxide ͑CeO 2 ͒ has suitable chemical stability properties and a high dielectric constant of 26. Furthermore, owing to a lattice mismatch as small as 0.35% with Si, CeO 2 is a material with the potential to reduce the defect densities at the interface.…”

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Deposition Processes in the Metallorganic Chemical Vapor Deposition of CeO[sub 2] Films

Suda¹,

Ogawa²,

Otsuka³

et al. 2010

J. Electrochem. Soc.

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This research examines the metallorganic chemical vapor deposition process using tetrakis(3-methyl-3-pentoxy)cerium, Ce[OC(normalC2normalH5)2CH3]4 , as a source material to prepare CeO2 films by two different mass spectrometric techniques: ionization by Li+ ion attachment and electron impact. The reaction by-products of (normalC2normalH5)2C=CH2 and normalH2O , respectively resulting from the pyrolysis of the source material and the dehydration reaction at the sticking of the precursor on the substrate surface, were detected as a result of the simple reaction integrated as Ce[OC(normalC2normalH5)2CH3]4→CeO2+2normalH2O+4(normalC2normalH5)2C=CH2 . The deposition was controlled by two mechanisms: desorption of the adsorbate from the surface site with the activation energy (Enormala)=0.85eV and decomposition of the source material with that of Enormala=0.29eV .

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confidence: 99%

Deposition Processes in the Metallorganic Chemical Vapor Deposition of CeO[sub 2] Films

Suda¹,

Ogawa²,

Otsuka³

et al. 2010

J. Electrochem. Soc.

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Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition

Cited by 1 publication

References 10 publications

Deposition Processes in the Metallorganic Chemical Vapor Deposition of CeO[sub 2] Films

Deposition Processes in the Metallorganic Chemical Vapor Deposition of CeO[sub 2] Films

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