Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu–Ni alloys

Wu, Tianru; Zhang, Xuefu; Yuan, Qinghong; Xue, Jiachen; Lu, Guangyuan; Liu, Zhihong; Wang, Huishan; Wang, Haomin; Ding, Feng; Yu, Qingkai; Xie, Xiaoming; Jiang, Mianheng

doi:10.1038/nmat4477

Cited by 568 publications

(454 citation statements)

References 30 publications

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“…CVD is a well‐established technology that has been demonstrated as a facile method for synthesizing large‐scale monolayer crystals, including graphene, MX 2 ,73, 110, 126, 127, 128, 129, 130, 131, 132, 133, 134 and their heterojunctions 135, 136, 137, 138, 139, 140. Compared with the exfoliation method, the direct synthesis of few‐layer and monolayer MX 2 by CVD is critical to large‐scale applications.…”

Section: Preparation Methodsmentioning

confidence: 99%

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

et al. 2017

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With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.

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Section: Preparation Methodsmentioning

confidence: 99%

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

et al. 2017

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“…CVD‐grown graphene has made great breakthrough in the growth of large‐area graphene 17, 155, 156, 157, 158, 159, 160. Recently, the synthesis of 2DLMs via CVD methods has been illustrated in many reports especially for MoS 2 ,30, 31, 161, 162, 163, 164, 165, 166, 167, 168, 169, 170, 171, 172, 173, 174, 175, 176, 177, 178, 179, 180, 181, 182, 183, 184, 185 which also shows promising applications in electronics and optoelectronics.…”

Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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“…Therefore, most graphene samples synthesized on Ni are in nonuniform multilayers. Very recently, we have successfully synthesized inch‐sized single‐crystalline graphene from a single nucleus on a Cu 85 Ni 15 substrate by using a particular localized carbon feeding strategy over 2.5 h 5. A key for the success of this process is the use of a CuNi alloy with a particular Ni concentration (15%), which allows simultaneous achievement of a very fast rate of graphene growth and a very low graphene nucleation density.…”

mentioning

confidence: 99%

“…A key for the success of this process is the use of a CuNi alloy with a particular Ni concentration (15%), which allows simultaneous achievement of a very fast rate of graphene growth and a very low graphene nucleation density. Compared to Cu, graphene growth on the CuNi alloy is fast due to the presence of abundant C precursors produced by the rapid decomposition of methane on the alloy surface 5. Meanwhile, the nucleation density of graphene on the CuNi alloy is greatly reduced despite the higher C concentration.…”

mentioning

confidence: 99%

“…Meanwhile, the nucleation density of graphene on the CuNi alloy is greatly reduced despite the higher C concentration. The increased growth rate is attributed to the high catalytic activity of the Ni atoms for the decomposition of CH 4 molecules,5, 6 whereas the decreased graphene nucleation density on CuNi alloy has never been understood. According to the classical theory of crystal growth, a high carbon concentration should lead to a high growth rate and a high nucleation density simultaneously 7.…”

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confidence: 99%

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How Low Nucleation Density of Graphene on CuNi Alloy is Achieved

Liu

Yin

et al. 2018

Advanced Science

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CuNi alloy foils are demonstrated to be one of the best substrates for synthesizing large area single‐crystalline graphene because a very fast growth rate and low nucleation density can be simultaneously achieved. The fast growth rate is understood to be due the abundance of carbon precursor supply, as a result of the high catalytic activity of Ni atoms. However, a theoretical understanding of the low nucleation density remains controversial because it is known that a high carbon precursor concentration on the surface normally leads to a high nucleation density. Here, the graphene nucleation on the CuNi alloy surfaces is systematically explored and it is revealed that: i) carbon atom dissolution into the CuNi alloy passivates the alloy surface, thereby drastically increasing the graphene nucleation barrier; ii) carbon atom diffusion on the CuNi alloy surface is greatly suppressed by the inhomogeneous atomic structure of the surface; and iii) a prominent increase in the rate of carbon diffusion into the bulk occurs when the Ni composition is higher than the percolation threshold. This study reveals the key mechanism for graphene nucleation on CuNi alloy surfaces and provides a guideline for the catalyst design for the synthesis of graphene and other 2D materials.

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Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu–Ni alloys

Cited by 568 publications

References 30 publications

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

How Low Nucleation Density of Graphene on CuNi Alloy is Achieved

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