Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K

Matthus, Christian D.; Benedetto, Luigi Di; Köcher, Matthias; Bauer, Anton J.; Licciardo, Gian Domenico; Rubino, Alfredo; Erlbacher, Tobias

doi:10.1109/jsen.2019.2891293

“…observations in literature [33], [34]. The sharp V A increase for T amb < 50 K can be attributed to carrier freeze-out [34]- [36], also present in diodes specifically designed for cryogenic temperature sensing [37]. Consistently and significantly lower V A | I 0 =const were found for diodes in the 'sparse' array compared to the 'dense' array as indicated in Fig.…”

Section: S -H : D M T -Asupporting

confidence: 65%

“…T a mb was selected for clearly showing the effects of T dr i f t , similar curves were found at other T a mb . observations in literature [33], [34]. The sharp V A increase for T amb < 50 K can be attributed to carrier freeze-out [34]- [36], also present in diodes specifically designed for cryogenic temperature sensing [37].…”

Section: S -H : D M T -Amentioning

confidence: 78%

Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

Hart

¹

,

Babaie

²

,

Vladimirescu

³

et al. 2021

IEEE J. Electron Devices Soc.

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This work presents a self-heating study of a 40nm bulk-CMOS technology in the ambient temperature range from 300 K down to 4.2 K. A custom test chip was designed and fabricated for measuring both the temperature rise in the MOSFET channel and in the surrounding silicon substrate, using the gate resistance and silicon diodes as sensors, respectively. Since self-heating depends on factors such as device geometry and power density, the test structure characterized in this work was specifically designed to resemble actual devices used in cryogenic qubit control ICs. Severe self-heating was observed at deep-cryogenic ambient temperatures, resulting in a channel temperature rise exceeding 50 K and having an impact detectable at a distance of up to 30 µm from the device. By extracting the thermal resistance from measured data at different temperatures, it was shown that a simple model is able to accurately predict channel temperatures over the full ambient temperature range from deep-cryogenic to room temperature. The results and modeling presented in this work contribute towards the full selfheating-aware IC design-flow required for the reliable design and operation of cryo-CMOS circuits.

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“…4, are compatible with previous observations in literature [31], [32]. The sharp 𝑉 𝐴 increase for 𝑇 𝑎𝑚𝑏 < 50 K can be attributed to carrier freeze-out [32]- [34], also present in diodes specifically designed for cryogenic temperature sensing [35]. Consistently and significantly lower 𝑉 𝐴 | 𝐼 0 =𝑐𝑜𝑛𝑠𝑡 were found for diodes in the 'sparse' array compared to the 'dense' array as indicated in Fig.…”

Section: S -H : D M T -A a Diode-based Temperature Sensingsupporting

confidence: 92%

“…Deviation from exponential behavior in cryogenically operated diodes shown in Fig. 4, are compatible with previous observations in literature [31], [32]. The sharp 𝑉 𝐴 increase for 𝑇 𝑎𝑚𝑏 < 50 K can be attributed to carrier freeze-out [32]- [34], also present in diodes specifically designed for cryogenic temperature sensing [35].…”

Section: S -H : D M T -A a Diode-based Temperature Sensingsupporting

confidence: 91%

Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

Hart¹,

Babaie²,

Vladimirescu³

et al. 2021

Preprint

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This work presents a self-heating study of a 40nm bulk-CMOS technology in the ambient temperature range from 300 K down to 4.2 K. A custom test chip was designed and fabricated for measuring both the temperature rise in the MOSFET channel and in the surrounding silicon substrate, using the gate resistance and silicon diodes as sensors, respectively. Since self-heating depends on factors such as device geometry and power density, the test structure characterized in this work was specifically designed to resemble actual devices used in cryogenic qubit control ICs. Severe self-heating was observed at deep-cryogenic ambient temperatures, resulting in a channel temperature rise exceeding 50 K and having an impact detectable at a distance of up to 30 µm from the device. By extracting the thermal resistance from measured data at different temperatures, it was shown that a simple model is able to accurately predict channel temperatures over the full ambient temperature range from deep-cryogenic to room temperature. The results and modeling presented in this work contribute towards the full selfheating-aware IC design-flow required for the reliable design and operation of cryo-CMOS circuits.

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“…Fortunately, the SiC CMOS technology developed by Fraunhofer IISB is addressing this need. A vertical p-i-n diode temperature sensor is already reported in this technology [21] and has a sensitivity of 2.3-3.4mV/K for a wide operating range and shows excellent linearity. This work reports on temperature sensing in the state-ofthe art 6 µm 4H-SiC CMOS technology [20], developed by Fraunhofer IISB.…”

mentioning

confidence: 99%

Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Romijn

¹

,

Middelburg

²

,

Vollebregt

³

et al. 2021

Self Cite

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Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of resistance, with a maximum change of 79%. Secondly, CMOS devices are used to implement a CTAT, which achieves a maximum sensitivity of 7.5mV/K in a temperature range of 25-165°C. The integration of readout electronics and sensors that are capable of operation in higher temperature than silicon, opens application in harsher environments.

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Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K

Cited by 20 publications

References 35 publications

Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures

Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

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