Ferroelectric materials for 64 Mb and 256 Mb DRAMs

Parker, L.; Tasch, A.F.

doi:10.1109/101.47582

Cited by 291 publications

(54 citation statements)

References 79 publications

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“…1,2 Within this class of materials, BaTiO 3 ͑BT͒, PbTiO 3 ͑PT͒, and SrTiO 3 ͑ST͒, in their crystalline form, display a semiconductor behavior and have an energy band gap of about 3.0 eV. These materials are processed by solid state reaction or chemical synthesis, such as sol-gel.…”

Section: ͓S0003-6951͑00͒03032-1͔mentioning

confidence: 99%

Photoluminescence of disordered ABO3 perovskites

Pizani

Leite

Pontes

et al. 2000

Applied Physics Letters

177

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Section: ͓S0003-6951͑00͒03032-1͔mentioning

confidence: 99%

Photoluminescence of disordered ABO3 perovskites

Pizani

Leite

Pontes

et al. 2000

Applied Physics Letters

177

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“…There is much interest in the areas of science and technology in perovskite-type structured compounds with the chemical ABO 3 formula (A and B are cations while O is the oxygen anion), owing to their wide range of electronic applications [1][2][3][4]. Within this class of compounds, SrTiO 3 and BaTiO 3 , in their crystalline form, display a semiconductor behavior.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition

Pontes¹,

Longo²,

Leite³

et al. 2003

Materials Chemistry and Physics

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Intense photoluminescence in highly disordered strontium titanate amorphous thin films prepared by the polymeric precursor method was observed at room temperature (300 K). The luminescence spectra of SrTiO 3 amorphous thin films at room temperature revealed an intense single-emission band in the visible region. X-ray absorption near edge structure was used to probe the local atomic structure of SrTiO 3 amorphous and crystalline thin films. Photoluminescence intensity in the 535 nm range was found to be correlated with the presence of non-bridging oxygen defects. A discussion is presented of the nature of this photoluminescence, which may be related to the disordered structure in SrTiO 3 amorphous thin films.

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“…53 Due to several scaling effects, some key properties are strongly thickness dependent. 54 Deviations from the infinitely large and ideal crystalline state occur during material synthesis and affect regions in the thin film responsible for the material's paraelectric and ferroelectric properties. 55 One can distinguish between intrinsic and extrinsic effects.…”

Section: Perovskite Phase In the Ultrathin-film Regimementioning

confidence: 99%

“…53 The difficulty of thin-film processing has posed challenges for the industrial implementation of ultrathin perovskites in the microelectronics industry. However, knowledge obtained from longstanding extensive research has equipped researchers with certain design rules and knowledge on ideal thin-film perovskite structures for high-k applications: 54 The dielectric properties of the material should not change in the temperature range of operation, which means that the material should always stay in one phase. 58 The phase can be stabilized, for example by using dopants.…”

Section: Perovskite Phase In the Ultrathin-film Regimementioning

confidence: 99%

Process–property relationship in high-k ALD SrTiO₃ and BaTiO₃: a review

et al. 2017

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bfPerovskites exhibit a wide range of remarkable material properties that have the potential to advance various scientific fields. These properties originate in their unique structure and composition. To leverage these properties in the ultrathin film regime, atomic-level control of thickness, composition, and crystal structure will be essential for creating next-generation perovskite devices. Atomic layer deposition (ALD) has the potential to enable these design prospects. However, its future use in the field will be dependent on the quality of the link between ALD process parameters and the perovskite phase.In this overview, we present work on barium and strontium titanate (BTO and STO) ultrathin films for high-k applications. We present ALD process strategies developed and optimized to achieve both desired composition and phase, yielding high dielectric constants and low leakage currents at the same time. We discuss thermal annealing, plasma treatment, and the use of seed layers and specialized precursors to improve the properties of BTO and STO by different enhancement mechanisms. In the ultrathin film regime, the understanding of macroscopic material properties will be dependent on the knowledge of the atomic scale arrangement. In conjunction with advances in manufacturing, we therefore also discuss novel strategies and techniques for characterization that will likely be significant in establishing a valid and reliable ALD process parameter-thin film dielectric property relationship.

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Ferroelectric materials for 64 Mb and 256 Mb DRAMs

Cited by 291 publications

References 79 publications

Photoluminescence of disordered ABO3 perovskites

Photoluminescence of disordered ABO3 perovskites

Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition

Process–property relationship in high-k ALD SrTiO₃ and BaTiO₃: a review

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Ferroelectric materials for 64 Mb and 256 Mb DRAMs

Cited by 291 publications

References 79 publications

Photoluminescence of disordered ABO3 perovskites

Photoluminescence of disordered ABO3 perovskites

Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition

Process–property relationship in high-k ALD SrTiO3 and BaTiO3: a review

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Process–property relationship in high-k ALD SrTiO₃ and BaTiO₃: a review